| PART |
Description |
Maker |
| SX1701B SX1701BI085TRT |
Highly linear wideband LNA Multi-channel, single-ended to differential conversion
|
Semtech Corporation
|
| D2204UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 12.5V - 900MHz SINGLE ENDED
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D1025UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W - 28V - 175MHz SINGLE ENDED
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| AS1528-BTDR AS1528-BTDT AS1529-BTDR AS1529-BTDT |
Micro-Power, 10-Bit, 150ksps, ADC, Single Ended or Differential
|
austriamicrosystems AG
|
| AS1524 AS1525 |
Micro-Power, 12-Bit, 150ksps, ADC, Single Ended or Differential
|
Austriamicrosystems AG
ams AG
|
| SI5330A-A00200-GM SI5330A-A00202-GM SI5330F-A00216 |
1.8/2.5/3.3 V LOW-JITTER, LOW-SKEW CLOCK BUFFER/LEVEL TRANSLATOR
Supports single-ended or differential input clock singnals Generates four differential (LVPECL, LVDS, HCSL) or eight single-ended (CMOS, SSTL, HSTL) outputs
|
Silicon Laboratories
|
| D2202UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2293UK D2293 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-500MHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D1210UK D1210 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-175MHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2212 D2212UK D2002 D2005 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| ISL26329FVZ ISL26320FBZ |
12-bit, 250kSPS Low-power ADCs with Single-ended and Differential Inputs and Multiple Input Channels
12-bit, 250kSPS Low-power ADCs with Single-ended and Differential Inputs and Multiple Input Channels
|
Intersil Corporation
|
