PART |
Description |
Maker |
SST39VF512 SST39VF512-70-4C-NH SST39VF010 SST39VF0 |
512 Kbit/1 Mbit (x8) multi-purpose flash From old datasheet system (SST39VFxxx / SST39LFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash x8 Flash EEPROM
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SST[Silicon Storage Technology Inc] SST[Silicon Storage Technology, Inc]
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SST39LF010-45-4C-B3KE SST39LF010-45-4C-MM SST39LF0 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SST[Silicon Storage Technology, Inc]
|
SST25VF020 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit Spi Serial Flash
|
SST
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M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
M36P0R9060N0ZANE M36P0R9060N0ZANF M36P0R9060N0 |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Mux I/O, Multi-Chip Package
|
Numonyx B.V
|
HMNR5128D HMNR5128D-70 HMNR5128D-70I HMNR5128D-85 |
5.0 or 3.3V, 4 Mbit (512 Kbit x 8) TIMEKEEPER NVSRAM
|
Hanbit Electronics Co.,Ltd
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M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package 512兆位(x16插槽,多银行,多层次,多突发28兆位闪存(突发)移动存储芯片.8V电源,多芯片封装
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STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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SST31LF043A-70-4C-WI SST31LF041-300-4E-WH SST31LF0 |
4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory 4 Mbit闪存1兆位56千位的SRAM ComboMemory 4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory 4 Mbit闪存1兆位56千位SRAM ComboMemory 4 Mbit Flash 1 Mbit or 256 Kbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PDSO32 XTAL MTL SMT HC49/USM 4 Mbit闪存1兆位56千位的SRAM ComboMemory XTAL CER SMT 7X5 2PAD 16-Bit Delta-Sigma ADC with internal reference, PGA and oscillator. I2C Serial Interface 6-SOT-23 DIODE SWITCH 75V 350MW SOT-23 RECTIFIER SCHOTTKY SINGLE 5A 60V 175A-Ifsm 0.7Vf 0.5A-IR SMC 3K/REEL
|
SILICON STORAGE TECHNOLOGY INC Silicon Storage Technology, Inc.
|
BBS-15 BBS-1/4 BBS-2/10 BBS-1-8/10 BBS-10 BBS-1-6/ |
72-Mbit QDR-II SRAM 2-Word Burst Architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 72-Mbit DDR-II SRAM 2-Word Burst Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 36-Mbit QDR-II SRAM 4-Word Burst Architecture Fuse 256K (32K x 8) Static RAM 64/256/512/1K/2K/4K x 18 Synchronous FIFOs Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs Neuron® Chip Network Processor 64-Kbit (8K x 8) Static RAM 72-Mbit QDR™-II SRAM 2-Word Burst Architecture 保险
|
NXP Semiconductors N.V.
|
M25P05-AVME6 M25P05-AVMP6 M25P05-AVMF6 M25P05-AVMN |
512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface 4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门,串行闪 From old datasheet system
|
http:// STMICROELECTRONICS[STMicroelectronics] ST Microelectronics 意法半导 STMicroelectronics N.V.
|
NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
SLA24C04-D SLA24C04-S SLA24C04-D-3 SLA24C04-S-3 Q6 |
4 Kbit 512 x 8 bit Serial CMOS EEPROMs/ I2C Synchronous 2-Wire Bus 4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus 4千位512 × 8位串行CMOS EEPROM的,I2C同步2线总线 4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
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Siemens Semiconductor Group SIEMENS AG SIEMENS A G
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