| PART |
Description |
Maker |
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五（巴西）直| 5A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五（巴西）直| 35A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd.
Glenair, Inc.
|
| SMA4030 |
PNP Darlington General purpose
TRANSISTOR,BJT POWER MODULE,INDEPENDENT,100V V(BR)CEO,3A I(C)
|
SANKEN[Sanken electric]
Allegro Microsystems Inc
|
| B25H2S60KL B25H2S20KL B25H2S40KL B25H2S10KL B25H2S |
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|600V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|200V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|400V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|100V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|1.2KV V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|1KV V(RRM)|25A I(T) 晶闸管模块|可控硅|双|独立| 1KV交五（无线资源管理）|5A我（翻译
|
SCHURTER AG
|
| CA3096AE CA3096CE |
TRANSISTOR,BJT,ARRAY,INDEPENDENT,40V V(BR)CEO,50MA I(C),DIP
TRANSISTOR,BJT,ARRAY,INDEPENDENT,24V V(BR)CEO,50MA I(C),DIP
From old datasheet system
|
Intersil Corp
|
| APT8018JNFR |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 800V V(BR)DSS | 40A I(D) 晶体管| MOSFET功率模块|独立| 800V的五（巴西）直| 40A条（丁）
|
Semtech, Corp.
|
| BSM121ARC |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 130A I(D) 晶体管| MOSFET功率模块|独立| 200伏五（巴西）直| 130A条（丁）
|
SIEMENS AG
|
| 1DI300MN-050 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 600V V(BR)CEO | 300A I(C)
Power Transistor Module
|
Fuji Electric
|
| IRGRDN400M12 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Diodes, Inc.
|
| D67DE7 D67DE5 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 500V V(BR)CEO | 100A I(C) 晶体管|晶体管电源模块|达林顿| 500V五（巴西）总裁| 100号A一（c
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 400V V(BR)CEO | 100A I(C) 晶体管|晶体管电源模块|达林顿| 400V五（巴西）总裁| 100号A一（c
|
Powerex, Inc.
|
| STE180N05 |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 50V V(BR)DSS | 180A I(D) 晶体管| MOSFET功率模块|独立| 50V五（巴西）直| 180A（丁
|
IXYS, Corp.
|
| QM30TB2H |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 30A I(C) 晶体管|晶体管电源模块| 3 - PH值大桥| 1KV交五（巴西）总裁| 30A条一（c
|
Mitsubishi Electric, Corp.
|
