| PART |
Description |
Maker |
| HYB3164405TL-50 HYB3164405T-50 SIEMENSAG-HYB316540 |
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO34
|
SIEMENS AG
|
| K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MC-4516CA726PF-A10 MC-4516CA726PF-A80 MC-4516CA726 |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
16M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE MODULE UNBUFFERED TYPE
|
NEC, Corp.
NEC Corp.
|
| UPD42S17405LA-60 UPD4217405LA-50 |
16M-BIT DYNAMIC RAM
|
NEC
|
| MN4SV17160BT-10 MN4SV17160BT-80 MN4SV17160BT-90 MN |
16M BIT SYNCHRONOUS DYNAMIC RAM
|
PANASONIC[Panasonic Semiconductor]
|
| UPD4216805LE-60 UPD4216805LE-50 UPD4216805LE-70 |
16M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT, HYPER PAGE MODE
|
NEC
|
| MC-428LFF721 |
3.3 V Operation 16M-Word By 72-Bit Dynamic RAM Module(工作电压3.3V的动态RAM模块)
|
NEC Corp.
|
| MC-4516CD641PS-A80 MC-4516CD641PS MC-4516CD641ES M |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM 1,600字，64位同步动态随机存储器模块以便内存
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MC-4516CB647XFA-A75 MC-4516CB647XFA |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 1,600字，64位同步动态RAM模块无缓冲型
|
Elpida Memory, Inc.
|
| HYB514405BJL HYB514405BJ-60 Q67100-Q2116 |
1M x 4-Bit Dynamic RAM(1M x 4-位动RAM (超级页面EDO模式))
RES 1.3K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA 1M X 4 EDO DRAM, 60 ns, PDSO20
1M x 4-Bit Dynamic RAM 100万4位动态随机存储器
|
SIEMENS AG
|
| HYB314405BJL-60 HYB314405BJL-70 Q67100-Q2124 |
1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4动RAM(快速页面模)
1M x 4-Bit Dynamic RAM
|
SIEMENS AG
|
