| PART |
Description |
Maker |
| RFP45N06 RF1S45N06SM RFG45N06 FN3574 |
45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs 45 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
45A/ 60V/ 0.028 Ohm/ N-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| RFG45N0602 RFP45N06 RFG45N06 RF1S45N06SM |
45A, 60V, 0.028 Ohm, N-Channel Power
|
Fairchild Semiconductor
|
| MTP50N06 MTP50N06V MTP50N06V_D ON2619 |
From old datasheet system
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
|
| AP4501AGM |
7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
ADVANCED POWER ELECTRONICS CORP
|
| STP30NE03L STP30NE03LFP 6672 |
Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:4VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:47uF; Capacitance
N - CHANNEL 30V - 0.028 ohm - 30A TO-220/TO-220FP STripFET POWER MOSFET
N - CHANNEL 30V - 0.028 - 30A TO-220/TO-220FP STripFET TM POWER MOSFET
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| PLO5-R00750FI PLO3-R05FI PLO5-R150FI PLO5-R020JI P |
RESISTOR, WIRE WOUND, 5 W, 1 %, 0.0075 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 1 %, 0.05 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 5 W, 1 %, 0.15 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 5 W, 5 %, 0.02 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 5 W, 1 %, 0.014 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 1 %, 0.021 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 5 W, 1 %, 0.015 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 5 W, 5 %, 0.01 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 1 %, 0.059 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 1 %, 0.028 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 5 W, 1 %, 0.0059 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 1 %, 0.011 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 1 %, 0.075 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 5 W, 1 %, 0.11 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 5 W, 1 %, 0.011 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 1 %, 0.0059 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 1 %, 0.11 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 1 %, 0.014 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 1 %, 0.013 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 1 %, 0.034 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 5 W, 1 %, 0.14 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.01 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 5 %, 0.02 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 5 W, 1 %, 0.013 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 3 W, 1 %, 0.0075 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 5 W, 1 %, 0.021 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 5 W, 1 %, 0.13 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, WIRE WOUND, 5 W, 1 %, 0.028 ohm, THROUGH HOLE MOUNT AXIAL LEADED
|
Welwyn Components, Ltd.
|
| MTP6N60EWC MTP6P20EW MTP6P20EWC MTP3N100E16 MTP3N1 |
6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6 A, 200 V, 1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
8 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
33 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
50 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
20 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| FDS8958A10 FDS8958A FDS8958AF085 |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench MOSFET
7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IXGH24N50BS IXGH24N60BS |
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 48A I(C) | TO-247SMD
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 48A I(C) | TO-247SMD 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 48A条一（c）|47SMD
|
IXYS, Corp.
|
| BUZ102SL Q67040-S4010-A2 |
SIPMOS ? Power Transistor
High Speed CMOS Logic 12-Stage Binary Counter 16-PDIP -55 to 125 SIPMOS功率晶体管（N通道增强模式的逻辑电平雪崩额定dv / dt的评价）
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) 47 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| ITH08F06G ITH08F06 ITH08F06B |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-252AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-220AB
HIGH - SPEED POWERLINE N - CHANNEL IGBT
|
MITEL[Mitel Networks Corporation]
|
|
