| PART |
Description |
Maker |
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| 2SA1425 E000527 |
TRANSISTOR (POWER AMPLIFIER/ DRIVER STAGE AMPLIFIER APPLICATIONS)
From old datasheet system
TRANSISTOR (POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS) 晶体管（功率放大器，放大器的驱动程序
|
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| 2SB1557 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SC3076 E000787 |
TRANSISTOR (POWER AMPLIFIER, SWITCING APPLICATIONS) 晶体管（功率放大器，SWITCING应用
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| 2SA1225 E000485 |
From old datasheet system
POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS
TRANSISTOR (POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5242 |
Power Amplifier Application NPN Transistor(功率放大器用NPN晶体 功率放大器应用NPN晶体管（功率放大器用npn型晶体管
NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS)
|
Toshiba, Corp.
|
| 2SA1930 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SA1681 E000546 |
TRANSISTOR (POWER AMPLIFIER/ SWITCHING APPLICATIONS)
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
From old datasheet system
TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)
|
Toshiba Semiconductor
|
| KTB1772 |
General Purpose Transistor
EPITAXIAL PLANAR PNP TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
