PART |
Description |
Maker |
MT46H16M32 |
Mobile Double Data Rate (DDR) SDRAM
|
MICRON
|
H5MS5162EFR |
536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM)
|
Hynix Semiconductor
|
W9412G6JH W9412G6JH-5 |
2M ?4 BANKS ?16 BITS DDR SDRAM Double Data Rate architecture; two data transfers per clock cycle
|
Winbond
|
MT46V8M16T MT46V8M16TG-8 MT46V8M16TG-75ZL MT46V8M1 |
DOUBLE DATA RATE DDR SDRAM
|
MICRON[Micron Technology]
|
W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM Double Data Rate architecture; two data transfers per clock cycle 4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond WINBOND ELECTRONICS CORP
|
HYB25D128160CT-6 HYB25D128160CT-5 HYB25D128160CE-5 |
128Mbit Double Data Rate (DDR) Components
|
Infineon
|
MT46V64M8 MT46V64M8P-5BF MT46V32M16 MT46V32M16P-6T |
Double Data Rate (DDR) SDRAM 512Mb: x4, x8, x16 Double Data Rate (DDR) SDRAM SDRAM Features 512Mb: x4, x8, x16 Double Data Rate SDRAM Features
|
Alliance Semiconductor ... Micron Technology
|
K4D263238F K4D263238F-QC40 K4D263238F-QC50 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步DRAM的双向数据选通和DLL 128Mbit DDR SDRAM From old datasheet system
|
Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronics Inc
|
HYB25D256163CE-4.0 |
16M x 16 Double Data Rate Graphics DRAM DDR SGRAM
|
Infineon Technologies
|
HYS72D32300HBR-7-C HYS72D32300GBR-5-C HYS72D64320G |
184-Pin Registered Double Data Rate SDRAM Module 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184 184-Pin Registered Double Data Rate SDRAM Module 32M X 72 DDR DRAM MODULE, 0.5 ns, DMA184
|
Qimonda AG http://
|