PART |
Description |
Maker |
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168 16M x 64 Bit DRAM Module unbuffered 16M x 72 Bit ECC DRAM Module unbuffered
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SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM 16M x 4 Bit 8k EDO DRAM 16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
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Infineon SIEMENS[Siemens Semiconductor Group]
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KMM366F1600BK2 KMM366F1680BK2 |
16M x 64 DRAM DIMM(16M x 64 动RAM模块) 16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
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SAMSUNG SEMICONDUCTOR CO. LTD.
|
GM71V17400CT-6 GM71V17400CCL |
x4 Fast Page Mode DRAM 4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
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M53231600CJ0-C50 |
16M X 32 EDO DRAM MODULE, 50 ns, SMA72
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HYM72V1625GS-50 |
16M X 72 EDO DRAM MODULE, 50 ns, DMA168
|
INFINEON TECHNOLOGIES AG
|
MC-4216LFC721FH-A60 |
16M X 72 EDO DRAM MODULE, 60 ns, PDMA168
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MT48LC16M16A2FG-7EITD MT48LC16M16A2P-75ITDTR |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 8 X 14 MM, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
|
Micron Technology, Inc.
|
THMY641661BEG-100 |
16M Word x 64 Bit Synchronous DRAM Module(16Mx 64位同步动态RAM模块) 16M Word x 64 Bit Synchronous DRAM Module(16M瀛?x 64浣??姝ュ???AM妯″?)
|
Toshiba Corporation
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IBM0164405B |
16M x 4 13/11 EDO DRAM(16M x 4 动态RAM(超页面模式并带24条地址线,其中13条为行地址选通,11条为列地址选通)) 1,600 × 4 13/11 EDO公司的DRAM,600 × 4动态随机存储器(超页面模式并带24条地址线,其中13条为行地址选通,11条为列地址选通)
|
International Business Machines, Corp.
|
HYI18T256160BF-25F HYI18T256160BC-25F HYB18T256160 |
16M X 16 DDR DRAM, 0.4 ns, PBGA84 GREEN, PLASTIC, TFBGA-84 16M X 16 DDR DRAM, 0.4 ns, PBGA84 PLASTIC, TFBGA-84 16M X 16 DDR DRAM, 0.45 ns, PBGA84 16M X 16 DDR DRAM, 0.5 ns, PBGA84 64M X 4 DDR DRAM, 0.45 ns, PBGA60
|
Qimonda AG
|
HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出(EDO)动态RAM)
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http:// SIEMENS AG
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