| PART |
Description |
Maker |
| DTC143ZAA DTC114GFA DTC124GFA DTC115GFA DTC123YFA |
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | TO-92VAR 晶体管| 50V五（巴西）总裁| 30mA的一（c）|2VAR
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 500mA的一（c）|律师- 71
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 500mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 100mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SC-71 晶体管| 50V五（巴西）总裁| 30mA的一（c）|律师- 71
晶体管| 50V五（巴西）总裁| 30mA的一c）|园区
晶体管| 50V五（巴西）总裁| 100mA的一c）|园区
TRANSISTOR | 50V V(BR)CEO | 20MA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 500NA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP
|
Samsung Semiconductor Co., Ltd.
Rohm Co., Ltd.
|
| 2SB1268S 2SB1268R 2SB1269Q 2SB1135Q 2SB1269S 2SD19 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-221VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-220
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-220VAR
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis 晶体管|晶体管|叩| 50V五（巴西）总裁| 12A条一（c）|20
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-220VAR 晶体管|晶体管|进步党| 50V五（巴西）总裁| 12A条一（c）|20VAR
|
Sanyo Electric Co., Ltd.
|
| 2DC2412R-7 2DC2412R |
50V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
|
Vishay Siliconix
Diodes
|
| BC857BLP-7 BC857BLP-7B BC857BLP11 DIODESINC-BC857B |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
50V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
|
Diodes Incorporated
|
| DTC124TC DTA124TC DTA1D3RE DTC1D3RE DTA114WC DTC11 |
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SOT-23
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | TO-92VAR
TRANSISTOR | SIP
晶体管| 50V五（巴西）总裁| 100mA的一c）| SOT - 23封装
TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 500mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23VAR 晶体管| 50V五（巴西）总裁| 100mA的一c）|的SOT - 23VAR
TRANSISTOR | 50V V(BR)CEO | 70MA I(C) | SOT-23 晶体管| 50V五（巴西）总裁|提供70mA一（c）| SOT - 23封装
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 晶体管| 50V五（巴西）总裁| 100mA的一（c）| SOT - 23封装
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP 晶体管| 50V五（巴西）总裁| 100mA的一（c）|园区
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23VAR 晶体管| 50V五（巴西）总裁| 100mA的一（c）|的SOT - 23VAR
|
FCI
Analog Devices, Inc.
Rohm Co., Ltd.
TE Connectivity, Ltd.
Diodes, Inc.
Kingbright, Corp.
|
| 2SA1012 2SA1012O 2SA1012Y |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-220AB
POWER TRANSISTORS(5A/50V/25W)
POWER TRANSISTORS(5A,50V,25W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 2SB1202 2SD1802 2SD1802T 2SD1802U 2SB1202T |
High-Current Switching Applications
TRANSISTOR,BJT,NPN,50V V(BR)CEO,3A I(C),TO-252
TRANSISTOR,BJT,PNP,50V V(BR)CEO,3A I(C),TO-252
From old datasheet system
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 3A I(C) | TO-252
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
SANYO[Sanyo Semicon Device]
Sanyo Semiconductor Corp
|
| 2SB1443 2SA1797 A5800341 2SC4672T100P 2SC4672T100Q |
Power Transistor (-50V/ -2A)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
Power Transistor (-50V, -2A)
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 2A I(C) | TO-243
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | SIP
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）|43
|
Rohm Co., Ltd.
|
| CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O
PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
Continental Device Indi...
|
| 1507-100A 1507-200A 1507-200B 1507-200C 1507-300G |
CAP POLYPROPYLENE .0051UF 50V 1% 单在行延迟线
CAP .00056UF 50V POLYPROPYLENE 单在行延迟线
Single-In-Line Delay Lines 单在行延迟线
CAP POLYPROPYLENE .47UF 50V 1%
CAP POLYPROPYLENE .051UF 50V 1%
.00056 UFD POLYPROPYLENE CAP
CAP POLYPROPYLENE .47UF 50V 2%
CAP POLYPROPYLENE .047UF 50V 2%
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| CSB1065 CSB1065N CSB1065R CSB1065P CSB1065Q |
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 390 hFE. Complementary CSD1506
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 56 - 120 hFE. Complementary CSD1506N
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 180 - 390 hFE. Complementary CSD1506R
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 82 - 180 hFE. Complementary CSD1506P
10.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 3.000A Ic, 120 - 270 hFE. Complementary CSD1506Q
|
Continental Device India Limited
|
| DTA123YCAHZG DTA123YCAHZGT116 |
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
|
ROHM
|
