| PART |
Description |
Maker |
| M63800FP |
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi
|
| M63800FP |
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
|
| M54563FP M54563P/FP |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation
|
| AD5520 EVAL-AD5520EB AD5520JST AD5520JST-REEL |
Per Pin Parametric Measurement Unit/Source Measure Unit
|
AD[Analog Devices]
|
| AAT3221IJS-18-T1 AAT3221IJS-24-T1 AAT3221IJS-30-T1 |
150mA NanoPower??LDO Linear Regulator
Hex Buffers / Drivers with Open-Collector High-Vltage Outputs 14-SO 0 to 70 150mA的NanoPower⑩LDO线性稳压器
128 x 128 pixel format, LED or EL Backlight available 150mA的NanoPower⑩LDO线性稳压器
150mA NanoPowerLDO Linear Regulator 150mA的NanoPower⑩LDO线性稳压器
POT 10K OHM SLIDE 100MM MONO FAD
150mA NanoPower?/a> LDO Linear Regulator
150mA NanoPower LDO Linear Regulator
150mA NanoPower⑩ LDO Linear Regulator
150MA NANOPOWER⒙ LDO LINEAR REGULATOR
|
Advanced Analogic Technologies, Inc.
ANALOGICTECH[Advanced Analogic Technologies]
|
| U2722A U2723A |
Modular Source Measure Unit
|
Keysight Technologies
|
| AME8750 |
Low-Dropout
150mA / 150mA Dual CMOS Regulator
|
AME
|
| AME8750BEEY1828Z AME8750 AME8750AEEY1828Y AME8750A |
Low-Dropout 150mA / 150mA Dual CMOS Regulator
|
AKM[Asahi Kasei Microsystems]
|
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
| PBA300F-12 PBA300F-15 PBA300F-24 PBA300F-36 PBA300 |
Unit type
|
RSG Electronic Components GmbH
|
| PBA1000F PBA1000F-12 PBA1000F-15 PBA1000F-24 PBA10 |
Unit type
|
RSG Electronic Components GmbH
|
| PAA50F-12 PAA50F-15 PAA50F-24 PAA50F-3 PAA50F-48 P |
Unit type
|
RSG Electronic Components GmbH
|
