| PART |
Description |
Maker |
| HGT1S12N60A4S HGTG12N60A4 HGTP12N60A4 FN4656 HGT1S |
600V, SMPS Series N-Channel IGBT
From old datasheet system
600V/ SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-247
600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-263AB
600V, SMPS Series N-Channel IGBT 54 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
Fairchild Semiconductor, Corp.
|
| HGTG30N60A4D |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V/ SMPS Series N-Channel IGBT with
|
Fairchild Semiconductor
|
| HGTG30N60A4D |
600V, SMPS Series N-Channel IGBT with
|
FAIRCHILD[Fairchild Semiconductor]
|
| FGB30N6S2 FGP30N6S2 FGH30N6S2 FGB30N6S2T |
600V, SMPS II Series N-Channel IGBT
600V/ SMPS II Series N-Channel IGBT
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| HGT5A40N60A4D |
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 75 A, 600 V, N-CHANNEL IGBT
|
INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
|
| HGTG30N60A4 |
600V, SMPS Series N-Channel IGBT 75 A, 600 V, N-CHANNEL IGBT, TO-247
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| HGTG40N60A4 HGTG40N60A4NL |
600V, SMPS Series N-Channel IGBT 75 A, 600 V, N-CHANNEL IGBT, TO-247
|
Intersil, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| HGT1S20N60A4S9A 20N60A4 IPD20N03L |
600V, SMPS Series N-Channel IGBTs
|
FAIRCHILD[Fairchild Semiconductor]
http://
|
| FQU1N60C FQD1N60C FQD1N60CTF FQD1N60CTM FQU1N60CTU |
600V N-Channel Advance QFET C-Series
600V N-Channel MOSFET
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
