| PART |
Description |
Maker |
| SMF-06020 |
Power Optimized GaAs FET
|
Samsung Electronics
|
| HMF06020 HMF-06020 HARRISCORPORATION-HMF06020 |
Power Optimized GaAs FET 2-14 GHz 功率优化的砷化镓场效应管2-14千兆
|
Harris, Corp.
HARRIS[Harris Corporation]
|
| NES1821B-30 |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500 |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| CFK2062-P1 |
800 to 900 MHz 30 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
| NE6501077 |
10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC]
ETC
|
| MGF0905A_1 MGF0905A MGF0905A1 |
L,S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TIM1414-2L |
MICROWAVE POWER GaAs FET
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MGF2407A1 MGF2407A |
MICROWAVE POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGF2415A1 MGF2415A |
MICROWAVE POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
