| PART |
Description |
Maker |
| M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP |
From old datasheet system
1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
1048576-bit (65536-word by 16-bit) CMOS static RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HN27C1024HCC |
65536-word x 16-bit CMOS UV Erasable and Programmable ROM
|
Renesas Technology / Hitachi Semiconductor
|
| M5M51016BRT-12VL M5M51016BRT-12VLL M5M51016BTP-12V |
Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85
From old datasheet system
1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M51R16AWG-10LI D98010 M5M51R16AWG-15LI M5M51R16A |
From old datasheet system
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576位（65536字由16位）的CMOS静RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| CXK5T8512TM CXK5T8512TM-10LLX CXK5T8512TM-12LLX CX |
65536-word X 8-bit High Speed CMOS Static RAM 65536字8位高速CMOS静态RAM
|
Sony, Corp.
SONY[Sony Corporation]
|
| TC511664BZ TC511664B |
65536 word x 16 bit DRAM
65,536 WORD x 16 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
| HM6709 |
65536-WORD X 4-BIT HIGH SPEED STATIC RAM (WITH OE)
|
Hitachi,Ltd.
|
| M6MGD137W34DWG |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
| TC55W800FT-70 |
512K Word x 16 Bit/1M Word x 8 Bit Full CMOS Static RAM(512K x 16 1M x 8 CMOS 静态RAM) 12k字16 Bit/1M字8位全部的CMOS静态RAM（为512k字16 100万字× 8位的CMOS静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| NM27C64 |
65536-Bit CMOS EPROM
|
Fairchild
|
| UPD27C1024A |
65536 x 16-Bit CMOS UV EPROM
|
NEC Electronics
|
| M5M29KE131BTP |
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY
|
Renesas Electronics Corporation.
|
