| PART |
Description |
Maker |
| M12S64322A-6BG M12S64322A-6TG M12S64322A-7BG M12S6 |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| A43L0616AV-55 A43L0616AV-7 A43L0616AV-7U A43L0616A |
512K X 16 Bit X 2 Banks Synchronous DRAM
|
http://
AMIC Technology Corporation
|
| A43E06161V-95UF A43E06161 A43E06161V A43E06161V-75 |
512K X 16 Bit X 2 Banks Synchronous DRAM
|
AMICC[AMIC Technology]
|
| M12L64322A-6BIG M12L64322A-6TIG |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M52L64322A M52L64322A-6BG M52L64322A-7BG |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| IC42S32202 |
512K x 32 Bit x 4 Banks (64-MBIT) SDRAM
|
Integrated Circuit Solution
|
| IC42S16102-6T IC42S16102-7T IC42S16102-7TI |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM 12k × 16位2银行6兆）内存
|
Rohm Co., Ltd.
Advanced Interconnections, Corp.
|
| IC42S16101 IC42S16101-5BG IC42S16101-5BIG IC42S161 |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM
DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 |
Synchronous DRAM(4M X 8 Bit X 4 Banks)
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行
Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行
133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
|
ADATA Technology Co., Ltd.
A-DATA[A-Data Technology]
|
| W9816G6IB |
512K ?2 BANKS ?16 BITS SDRAM
|
Winbond
|
