Part Number Hot Search : 
M300000 N5398 30KPA54A 2500D TVS318 MSM64422 2111A4 MM1442
Product Description
Full Text Search

HY57V161610D - 16M DRAM From old datasheet system

HY57V161610D_280676.PDF Datasheet

 
Part No. HY57V161610D HY57V
Description 16M DRAM
From old datasheet system

File Size 120.08K  /  11 Page  

Maker

Hyundai



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: HY57V161610D
Maker: HY
Pack: TSSOP
Stock: Reserved
Unit price for :
    50: $0.92
  100: $0.88
1000: $0.83

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ HY57V161610D HY57V Datasheet PDF Downlaod from Datasheet.HK ]
[HY57V161610D HY57V Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for HY57V161610D ]

[ Price & Availability of HY57V161610D by FindChips.com ]

 Full text search : 16M DRAM From old datasheet system
 Product Description search : 16M DRAM From old datasheet system


 Related Part Number
PART Description Maker
HYM72V1625GS-60 HYM72V1625GS-50 HM72V166 HYM72V162 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 50 ns, DMA168
16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
16M x 72-Bit EDO-DRAM Module (ECC - Module)
From old datasheet system
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
MT48LC16M16A2FG-7EITD MT48LC16M16A2P-75ITDTR 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 8 X 14 MM, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
Micron Technology, Inc.
KMM366F1600BK2 KMM366F1680BK2 16M x 64 DRAM DIMM(16M x 64 动RAM模块)
16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
SAMSUNG SEMICONDUCTOR CO. LTD.
HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM511640 16M EDO DRAM (4-Mword x 4-bit), 50ns
16M EDO DRAM (4-Mword x 4-bit), 60ns
16M EDO DRAM (4-Mword x 4-bit), 70ns
Elpida Memory
HYB25D256160BF-7 HYB25D256160BEL-7F 16M X 16 DDR DRAM, 0.75 ns, PBGA60
16M X 16 DDR DRAM, 0.75 ns, PDSO66
INFINEON TECHNOLOGIES AG
KMM5364003CKG KMM5364103CK KMM5364103CKG KMM536400 4M X 36 FAST PAGE DRAM MODULE, 50 ns, SMA72
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K刷新V
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
HYB25D128160ATL-7 HYB25D128400ATL-6 HYB25D128400AT 8M X 16 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
8M X 16 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66
8M X 16 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 4 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66
128 Mbit Double Data Rate SDRAM 128兆双倍数据速率SDRAM
Infineon Technologies AG
IS42S16160B IS42S83200B IS42S16160B-7BI IS42S16160 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
Integrated Silicon Solution, Inc.
K4M51323PI-HG750 K4M51323PG-HG750 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE AND HALOGEN FREE, FBGA-90
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 HALOGEN FREE AND ROHS COMPLIANT, FBGA-90
Elite Semiconductor Memory Technology, Inc.
 
 Related keyword From Full Text Search System
HY57V161610D Outputs HY57V161610D logic HY57V161610D pulse HY57V161610D Corp HY57V161610D System
HY57V161610D output data HY57V161610D switching HY57V161610D level converter HY57V161610D Drain HY57V161610D transient design
 

 

Price & Availability of HY57V161610D

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.54530119895935