| PART |
Description |
Maker |
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| CMLDM7002A CMLDM7002AJ |
SMD Small Signal Mosfet Dual N-Channel Enhancement Mode
SURFACE MOUNT PICOmini DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
|
CENTRAL[Central Semiconductor Corp]
|
| CTLM8110-M832D |
SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER
|
Central Semiconductor Corp
|
| MMFT3055E_D ON2223 MMFT3055E-D |
Medium Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount
From old datasheet system
N-hannel Enhancement-ode Logic Level SOT23
|
ON Semiconductor
|
| CMLDM8002A CMLDM8002AJ |
SURFACE MOUNT PICOmini DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET 0.28 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor, Corp.
|
| IRF820 IRF823 IRF821 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| 3SK248 1101 |
N-Channel Enhancement Silicon MOSFET
From old datasheet system
|
Sanyo
|
| CMPDM7002AG CMPDM7002A10 |
SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
|
Central Semiconductor Corp
|
| CEDM7002AE |
SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET
|
Central Semiconductor Corp
|
| CMLDM8120 CMLDM8120G |
SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
|
Central Semiconductor Corp
|
| CEDM8001 |
SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
|
Central Semiconductor Corp
|
