| PART |
Description |
Maker |
| K4D28163HD |
2M x 16Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| SY87700L SY87700LZI |
High Efficient Rectifier Diodes
3.3V 32-175Mbps AnyRateTM Clock and Data Recovery
|
Micrel Semiconductor
|
| DLPA006 DLPA006-7 DLPA00608 |
DATA BUS TRANSIENT SUPPRESSOR / 3-PHASE FULL WAVE BRIDGE RECTIFIER
|
Diodes Incorporated
|
| DLPA0061 |
DATA BUS TRANSIENT SUPPRESSOR/THREE PHASE FULL WAVE BRIDGE RECTIFIER
|
Diodes Incorporated
|
| HI-8684PST-10 HI-8683 HI-8683PJI HI-8683PJT HI-868 |
ARINC INTERFACE DEVICE ARINC 429& 561 SERIAL DATA TO 8-BIT PARALLEL DATA
384 MCELL 3 VOLT ZERO POWER ISP CPLD - NOT RECOMMENDED for NEW DESIGN
(HI-8683 / HI-8684) ARINC INTERFACE DEVICE ARINC 429 & 561 SERIAL DATA TO 8-BIT PARALLEL DATA
ARINC INTERFACE DEVICE ARINC 429& 561 SERIAL DATA TO 8-BIT PARALLEL DATA
System component for interfacing incoming ARINC 429 signals to 8-bit parallel data
|
http://
HOLTIC[Holt Integrated Circuits]
HOLT INTEGRATED CIRCUITS INC
Holt Integrated Circuit...
|
| W9751G6KB-18 W9751G6KB-25 W9751G6KB-3 W9751G6KB25A |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| M14D5121632A-2K |
Internal pipelined double-data-rate architecture; two data access per clock cycle
|
Elite Semiconductor Mem...
|
| NT5DS4M32EG-6 NT5DS4M32EG NT5DS4M32EG-5 NT5DS4M32E |
1M 】 32 Bits 】 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AS6C62256A AS6C62256A-70PIN |
Common data inputs and data outputs
32K X 8 BIT LOW POWER CMOS SRAM
|
Alliance Semiconductor ...
|
| RC96V24DP |
Single Device Data/Fax Modem Data Pump
|
Rockwell
|
