| PART |
Description |
Maker |
| BUZ21 BUZ21SMD |
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.085 Ohm, 21A, NL
Power MOSFET, 100V,D²PAK , RDSon=0.085 Ohm, 21A, NL
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAk, RDSon = 5.9mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 6.2mOhm, 80A, LL
|
INFINEON[Infineon Technologies AG]
|
| SPU30P06P SPD30P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 75m
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BUZ350 |
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.12 Ohm, 22A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSO350N03 |
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 35mOhm, 6.0A, LL, dual
OptiMOS2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| BSO064N03S |
OptiMOS2 Power-Transistor
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 6.4mOhm, 16A, LL
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SPP10N10 SPB10N10 SPI10N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=180mOhm, 10A, NL
SIPMOS Power-Transistor
SIPMOS功率晶体
|
Infineon Technologies AG
|
| SPP10N10L |
Power MOSFET, 100V, TO-220, RDSon=154mOhm, 10A, LL
|
Infineon
|
| IPU07N03LA |
OptiMOS®2 - Power packages
OptiMOS2 Power MOSFET. 25V. TO251. RDSon = 6.5mOhm. 30A. LL ？的OptiMOS功率MOSFET25V的TO251。导通状态\u003d 6.5mOhm30A条。当地雇员？
|
Infineon
Toshiba, Corp.
|
| ADP194ACBZ-R7 ADP194CB-EVALZ |
Logic Controlled, High-Side Power Switch Low RDSON of 80 mΩ at 1.8 V
|
Analog Devices
|
| SPU09P06PL |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK RDSon = 0.25
|
Infineon
|
| BSO119N03S INFINEONTECHNOLOGIESAG-BSO119N03S |
GIGATRUE CAT6 UNIVERSAL JACK, GRAY
OptiMOS2 Power-Transistor
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 11.9mOhm, 11A, LL
|
INFINEON[Infineon Technologies AG]
|
|
