| PART |
Description |
Maker |
| HEF4737BF HEF4737BN HEF4737 HEF4737B HEF4737BD HEF |
Quadruple static decade counters 10年翻两番的静态计数器
COUNTER|UP|DECADE|CMOS|DIP|18PIN|PLASTIC 4000/14000/40000 SERIES, ASYN POSITIVE EDGE TRIGGERED 17-BIT UP DECADE COUNTER, PDIP18
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| KM684000C KM684000CL KM684000CLG-5 KM684000CLG-5L |
Quadruple Bilateral Analog Switch 14-TVSOP -40 to 85
Quadruple Bilateral Analog Switch 14-SOIC -40 to 85
512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM
Quadruple Bilateral Analog Switch 14-PDIP -40 to 85 512Kx8位低功耗CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| 74HCT4510 74HC4510 74HC4510PW 74HC4510D 74HC4510DB |
Quadruple D-Type Flip-Flops With Clear 16-TSSOP -40 to 85
BCD up/down counter HC/UH SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT BIDIRECTIONAL DECADE COUNTER, PDSO16
BCD up/down counter HC/UH SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT BIDIRECTIONAL DECADE COUNTER, PDIP16
BCD up/down counter BCD码向向下计数
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| LS7031 |
6 DECADE MOS UP COUNTER WITH 8 DECADE LATCH AND MULTIPLEXER
|
LSI[LSI Computer Systems]
|
| 74HCT190 74HC190PW 74HC190 74HC190D 74HC190DB 74HC |
Presettable synchronous BCD decade up/down counter
Presettable synchronous BCD decade up/down counter HC/UH SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT BIDIRECTIONAL DECADE COUNTER, PDIP16
Presettable synchronous BCD decade up/down counter HC/UH SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT BIDIRECTIONAL DECADE COUNTER, PDSO16
Presettable synchronous BCD decade up/down counter 可预置同BCD码十年向向下计数
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 10016 F10016 10010 F10010 |
BCD DECADE COUNTER/4-BIT BINARY COUNTER
(F10016) BCD Decade Counter / 4 Bit Binary Counter
BCD DECADE COUNTER/4-BIT BINARY COUNTER BCD码十COUNTER/4-BIT二进制计数器
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| UPD4265800LE-A80 UPD4264800LE-A80 UPD4265800LE-A70 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
64K x 16 Static RAM
1K x 8 Dual-Port Static RAM
1-Mbit (64K x 16) Static RAM x8快速页面模式的DRAM
|
STMicroelectronics N.V.
|
| CAT34WC02W-TE13 CAT34WC02Y-TE13 CAT34WC02Y-1.8TE13 |
MoBL® 2-Mbit (256K x 8) Static RAM
MoBL® 8-Mbit (512K x 16) Static RAM
MoBL2™ 4-Mb (256K x 16) Static RAM
MoBL® 4-Mbit (256K x 16) Static RAM
5V, 3.3V, ISR™ High-Performance CPLDs
Licorice Board (CY22150 Candy Board) EEPROM
MoBL® 4-Mbit (512K x 8) Static RAM EEPROM
MoBL2™ 4-Mb (256K x 16) Static RAM EEPROM
MoBL® 2-Mbit (128K x 16) Static RAM
256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Bourns, Inc.
3M Company
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MC14017BCP MC14017BF MC14017B MC14017BD MC14017BFE |
Decade Counter
|
ONSEMI[ON Semiconductor]
|
