| PART |
Description |
Maker |
| 2N5558 2N5358 2N5359 2N5103 2N5104 2N5105 2N5163 2 |
(2N5xxx) Low Power Field Effect Transistors
|
Solitron Devices
|
| 2N4302 2N4139 2N4224 2N4303 2N4304 |
(2N4xxx) Low Power Field Effect Transistors
|
Solitron Devices
|
| BUT11AF |
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
|
Wing Shing Computer Compone...
WINGS[Wing Shing Computer Components]
|
| 2SD1650 |
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
|
WINGS[Wing Shing Computer Components]
|
| BU508DF |
SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
|
WINGS[Wing Shing Computer Components]
|
| D1427 2SD1427 |
Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
|
WINGS[Wing Shing Computer Components]
|
| 2SD690 |
isc Silicon NPN Power Transistor DESCRIPTION
|
Inchange Semiconductor ...
|
| 2SK2941 2SK2941-ZJ-E2 2SK2941-ZJ-E1 2SK2941-ZJ-E1J |
Low voltage 4V drive power MOSFET
MOS Field Effect Transistors
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| FPAB50PH60 |
Smart Power Module for Front-End Rectifier General Description
|
FAIRCHILD[Fairchild Semiconductor]
|
| FPAB30PH60 |
Smart Power Module for Front-End Rectifier General Description
|
FAIRCHILD[Fairchild Semiconductor]
|
| HM1-65789F-5 HM1-65789H-5 HM1-65789K-5 HM1-65789K- |
HID head lamp valve socket; HRS No: 765-0023-9 00; Operating Temperature Range (degrees C): -55 to 140; Generic Name: HID Lamp; General Description: Accessory; Shield clamp
ECU interface connectors; HRS No: 757-0016-9 00; Operating Temperature Range (degrees C): -30 to 105; General Description: Accessory; Retainer
ECU interface connectors; HRS No: 757-0011-5 00; Operating Temperature Range (degrees C): -30 to 105; General Description: Accessory; Retainer
JIS C 5432 standard connectors, Small and lightweight interface; HRS No: 114-0053-8 71; Shell Size (dia): 13; Operating Temperature Range (degrees C): -25 to 85; General Description: Accessory; Receptacle cap; Screw lock
x4 SRAM x4的SRAM
|
Electronic Theatre Controls, Inc.
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
