| PART |
Description |
Maker |
| SST29EE512-70-4I-EH SST29LE512-70-4I-EH SST29VE512 |
512 Kbit (64K x 8) page-mode EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 3V, 200 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 5V, 70 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 3V PROM, 150 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式的EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| SST29EE512704IPHE SST29EE512 SST29EE512-70-4C-EH S |
512 Kbit (64K x8) Page-Write EEPROM
|
SST[Silicon Storage Technology, Inc]
|
| SLA24C04-D/P SLA24C04-S/P SLA24C04-S-3/P SLE24C04- |
4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode
4 Kbit 512 x 8 bit Serial CMOS EEPROMs/ I2C Synchronous 2-Wire Bus/ Page Protection Mode
|
SIEMENS AG
Siemens Semiconductor Group
|
| M24512-WBN6 M24512-WBN6T M24512-WMW6T MM24512-WBN6 |
512 Kbit Serial I??Bus EEPROM
512 Kbit Serial IBus EEPROM 512千位串行I眷总线的EEPROM
CAP 3300UF 50V ELECT SMG RAD
512 Kbit Serial I? Bus EEPROM
512 Kbit Serial IC Bus EEPROM
512 Kbit Serial I裁 Bus EEPROM
512 KBIT SERIAL I²C BUS EEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| EN29LV512-45RSIP EN29LV512-45RTCP EN29LV512-55TIP |
512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory 512千位4K的8位）统一部门.0伏的CMOS只闪
|
Electronic Theatre Controls, Inc.
Eon Silicon Solution Inc.
|
| T221160A-35S T221160A-30J T221160A T221160A-30S T2 |
64K x 16 DYNAMIC RAM FAST PAGE MODE 64K的16动态RAM快速页面模
|
TM Technology, Inc.
TMT[Taiwan Memory Technology]
|
| KM4164B KM4164B-10 KM4164B-12 KM4164B-15 |
64K X 1 BIT DYNAMIC RAM WITH PAGE MODE 64K的1位动态内存页面模
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Samsung Electronic
|
| IC41C1664 IC41LV1664 IC41C1664-25K IC41C1664-25KI |
64K x 16 bit Dynamic RAM with EDO Page Mode
|
ICSI[Integrated Circuit Solution Inc]
|
| GLT41116 GLT4116-30J4 GLT4116-30TC GLT4116-35J4 GL |
64k x 16 CMOS Dynamic RAM with Fast Page Mode 64k的16的CMOS动态随机存储器的快速页面模
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| SLA24C08-D_P SLA24C08-D-3_P SLA24C08-S_P SLA24C08- |
8/16 Kbit 1024/2048 x 8 bit Serial CMOS EEPROMs/ I2C Synchronous 2-Wire Bus/ Page Protection Mode
8/16 Kbit 1024/2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode
8/16 Kbit 1024/2048 x 8 bit Serial CMOS EEPROMs I2C Synchronous 2-Wire Bus Page Protection Mode
|
SIEMENS[Siemens Semiconductor Group]
|
| V53C464A V53C464J V53C464P V53C464Z |
High Performance / Low Power 64K x 4-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
| M24C02-WMN6P M24C02-WBN6P M24C16-RBN6P M24C16-WMN6 |
Enhanced ESD/latch-up protection, More than 40-year data retention
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I2C bus EEPROM
|
STMicroelectronics
|
