PART |
Description |
Maker |
M24512-WBN6 M24512-WBN6T M24512-WMW6T MM24512-WBN6 |
512 Kbit Serial I??Bus EEPROM 512 Kbit Serial IBus EEPROM 512千位串行I眷总线的EEPROM CAP 3300UF 50V ELECT SMG RAD 512 Kbit Serial I? Bus EEPROM 512 Kbit Serial IC Bus EEPROM 512 Kbit Serial I裁 Bus EEPROM 512 KBIT SERIAL I²C BUS EEPROM
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
EN29F512 EN29F512-55TCP EN29F512-55TC EN29F512-45J |
512 Kbit (64K x 8-bit) 5V Flash Memory
|
ETC[ETC] Eon Silicon Solution Inc.
|
Q67100-H3502 Q67100-H3503 Q67100-H3504 SLA24C164-D |
16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode 16千位2048 × 8位串行CMOS EEPROM的,I2C同步2线巴士,页面保护模式 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode 2K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Siemens Semiconductor Group SIEMENS AG
|
A426316B A426316BS A426316BS-30 A426316BS-30L A426 |
64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
|
AMIC Technology
|
KM4164B KM4164B-10 KM4164B-12 KM4164B-15 |
64K X 1 BIT DYNAMIC RAM WITH PAGE MODE 64K的1位动态内存页面模
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. Samsung Electronic
|
A416316B A416316BS-30 A416316BS-30L A416316BS-35 A |
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE 64K的16的CMOS动态RAM的快速页面模
|
AMIC Technology Corporation AMIC Technology, Corp. http://
|
AM27C512-15F6 AM27C512-120PC AM27C512-70DI ADVANCE |
64K X 8 UVPROM, 120 ns, CDIP28 64K X 8 OTPROM, 90 ns, PDIP28 64K X 8 UVPROM, 55 ns, CDIP28 64K X 8 UVPROM, 90 ns, CDIP28 64K X 8 UVPROM, 70 ns, CDIP28 IC 集成电路 512 Kilobit (64 K x 8-Bit) CMOS EPROM
|
ADVANCED MICRO DEVICES INC SPANSION LLC Rochester Electronics, LLC AMD
|
M27C512-10 M27C512-12F1 M27C512-12F1E M27C512-12F1 |
CAP 620PF 200V 1% NP0(C0G) RAD.20 T&R R-MIL-PRF-20 STANDOFF 1-To-4 Address Register/Driver With 3-State Outputs 80-TSSOP -40 to 85 512千位4K的8)紫外线存储器和OTP存储 SERVSWITCH USB COAX CPU CABLES, WITH AUDIO 50FT 512千位64Kb的x8紫外线存储器和OTP存储 512 Kbit (64K x8) UV EPROM and OTP EPROM 512千位4K的8)紫外线存储器和OTP存储 512 Kbit 64Kb x8 UV EPROM and OTP EPROM 512千位64Kb的x8紫外线存储器和OTP存储 SMM310; Package: HG-MMA-4; Acoustic Sensitivity: -42.0 dBV/Pa; Signal to Noise: 59.0 dB(A); V<sub>DD</sub> (min): 1.5 V; V<sub>DD</sub> (max): 3.3 V; Distortion Treshold: 110.0 dBSPL; 512千位64Kb的x8紫外线存储器和OTP存储 CAP 39PF 200V 5% NP0(C0G) AXIAL T&R R-MIL-PRF-20 CAP 33PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED Fuses, 100mA 250V SB 5X15 BULK CAP 3.3PF 100V /-0.25PF NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 2700PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 3300PF 100V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 33PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 2200PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED CAP 220PF 100V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 220PF 50V 2% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 330PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED CAP 330PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 24PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR 20-Bit Buffer/Driver With 3-State Outputs 56-SSOP -40 to 85 CAP 100UF 63V ALUM ELECT, 20% LOW ESR SMD, 10X10.2 CAP 220PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR CAP 8200UF 450V ELECT SCREW TERM GLASS TUBE FOR DS80 IRON PKG/4 SERV SWITCH USB COAX CPU CABLES 50 FT SERV SWITCH USB COAX CPU CABLES 35 FT 512 KBIT (64KB X8) UV EPROM AND OTP EPROM 64K X 8 OTPROM, 200 ns, PDIP28 64K X 8 OTPROM, 100 ns, PDSO28 64K X 8 OTPROM, 150 ns, PQCC32 64K X 8 OTPROM, 120 ns, PDIP28 64K X 8 OTPROM, 120 ns, PQCC32 64K X 8 OTPROM, 200 ns, PQCC32
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
A426316BS-30L A426316BS-35L A426316BV-35L A426316B |
64K X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE 64K的16的CMOS动态RAM与江户页面模
|
http:// AMIC Technology, Corp. AMIC Technology Corporation
|
SLA24C164-D_P SLA24C164-D-3_P SLA24C164-S_P SLA24C |
16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode
|
SIEMENS[Siemens Semiconductor Group]
|
SLA24C04-D SLA24C04-S SLA24C04-D-3 SLA24C04-S-3 Q6 |
4 Kbit 512 x 8 bit Serial CMOS EEPROMs/ I2C Synchronous 2-Wire Bus 4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus 4千位512 × 8位串行CMOS EEPROM的,I2C同步2线总线 4 Kbit 512 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
|
Siemens Semiconductor Group SIEMENS AG SIEMENS A G
|
AT28BV64B-20SC AT28BV64B-20SI AT28BV64B-20TC AT28B |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
|
Atmel
|