| PART |
Description |
Maker |
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702P5053 |
GaAlAs-Lumineszenzdiode (660 nm)
|
OSRAM GmbH
|
| Q62703Q6175 Q62703Q1094 |
GaAlAs-IR-Lumineszenzdiode (880 nm)
|
OSRAM GmbH
|
| Q65110A2741 SFH722112 |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor
|
OSRAM GmbH
|
| 124141 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 134144 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 125244 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 115180 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 128254 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487 |
From old datasheet system
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| SFH40903 SFH409 SFH409-2 |
GaAs-IR-Lumineszenzdiode
|
OSRAM GmbH
|
| Q62703Q0148 Q62703Q0256 Q62703Q0833 Q62703Q0838 |
IR-Lumineszenzdiode Infrared Emitter
|
OSRAM GmbH
|
