| PART |
Description |
Maker |
| MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTW32N25E MTW32N25 |
TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MJ21194 MJ21193 ON1989 MJ2194 |
16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA
From old datasheet system
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 250 WATTS
|
MOTOROLA INC
ON Semiconductor
Motorola, Inc
|
| IRFP254 |
Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A) 功率MOSFET（减振钢板基本\u003d 250伏，的Rdson）\u003d 0.14ohm，身份证\u003d 23A条）
HEXFET? Power MOSFET
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
|
International Rectifier, Corp.
Samsung semiconductor
|
| KXU05N25 |
VDS (V) = 250V RDS(ON) 1 (VGS = 10V) Drain-Source Voltage VDSS 250 V
|
TY Semiconductor Co., Ltd
|
| MJW2119310 MJW21194G |
16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W 16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-247
|
ON Semiconductor
|
| STT358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| IRFZ44VZLPBF IRFZ44VZSPBF IRFZ44VZPBF |
HEXFET㈢ Power MOSFET ( VDSS = 60V , RDS(on) = 12mヘ , ID = 57A )
HEXFET? Power MOSFET ( VDSS = 60V , RDS(on) = 12mΩ , ID = 57A )
HEXFET垄莽 Power MOSFET ( VDSS = 60V , RDS(on) = 12m楼? , ID = 57A )
|
International Rectifier
|
| IRFI830G IRFI830GPBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=500V Rds(on)=1.5ohm Id=3.1A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=500V/ Rds(on)=1.5ohm/ Id=3.1A)
Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=3.1A) 功率MOSFET（减振钢板基本\u003d 500V及的Rdson）\u003d 1.5ohm，身份证\u003d 3.1A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF830S IRF830STRL IRF830STRR |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=500V Rds(on)=1.5ohm Id=4.5A)
Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=4.5A)
Power MOSFET(Vdss=500V/ Rds(on)=1.5ohm/ Id=4.5A)
|
IRF[International Rectifier]
|
| IRF520N |
Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) 功率MOSFET（减振钢板基本\u003d 100伏，的Rds（on）\u003d 0.20欧姆，身份证\u003d 9.7A
Power MOSFET(Vdss = 100 V/ Rds(on) = 0.20 Ohm/ Id= 9.7A)
Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)
|
International Rectifier, Corp.
|
| MMFT107T1D MMFT107T3 MMFT107T1 MMFT107 MMFT107T1-D |
Power MOSFET 250 mA, 200 Volts N-Channel SOT-223
Power MOSFET 250 mA / 200 Volts
Power MOSFET 250 mA, 200 Volts 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
|
ONSEMI[ON Semiconductor]
|
