| PART |
Description |
Maker |
| 2N4900X 2N4898X 2N4899X |
PNP Epitaxial Base Medium Power Transistor（TO-66 Metal Package中等功率PNP外延晶体管（TO-66 金属封装 进步党外延基地中等功率晶体管（至66金属封装）（中等功率进步党外延晶体管（至66金属封装））
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| GL194A |
N P N S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| GMBT194 |
N P N S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| BD201 BD202 BD204 BD203 |
EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS
|
GE Security, Inc.
GE[General Semiconductor]
|
| 2N6246 2N6248 2N6247 2N6469 |
SILICON PNP EPITAXIAL BASE HIGH POWER TRANSISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| BDS19SMD BDS18SMD BDS19 BDS18 |
SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BDS20 BDS20SMD BDS21 BDS21SMD |
SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
|
SemeLAB
Seme LAB
|
| SBCP53-10T1G SBCP53-16T1G SBCP53T1G BCP53-16T3G |
PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT
|
ON Semiconductor
|
| KSB1116A KSB1116 KSB1116AGBU KSB1116AGTA KSB1116AL |
Audio Frequency Power Amplifier & Medium Speed Switching
PNP Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE.
PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
