| PART |
Description |
Maker |
| 2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A.
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A.
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
From old datasheet system
|
General Electric Solid State
ETC[ETC]
|
| SCA-4-10-75 |
Power Splitter/Combiner 4 Way-0° 75?/a> 10 to 1000 MHz
Power Splitter/Combiner 4 Way-0∑ 75з 10 to 1000 MHz
Power Splitter/Combiner 4 Way-0 75 10 to 1000 MHz
Power Splitter/Combiner 4 Way-075з 10 to 1000 MHz
Power Splitter/Combiner 4 Way-0??75蟹 10 to 1000 MHz
|
MINI[Mini-Circuits]
|
| DS-327 DS-327PIN |
Surface Mount Two-Way Power Divider 5 - 1000 MHz
Flatpack Two-Way Power Divider 5 - 1000 MHz
|
MACOM[Tyco Electronics]
|
| APT18F60B APT38F80L APT29F100L APT29F80J APT21M100 |
15 A, 600 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB ROHS COMPLIANT, 3 PIN
22 A, 800 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA ROHS COMPLIANT, T-MAX, 3 PIN
1000V, 29A, 0.46Max, trr ÷270ns N-Channel FREDFET 17 A, 1000 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: ISOTOP®; ID (A): 31; RDS(on) (Ohms): 0.21; BVDSS (V): 800; 44 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET
31 A, 1000 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000;
53 A, 600 V, 0.62 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi, Corp.
MICROSEMI CORP
|
| 1014-12 |
12 W, 28 V, 1000-1400 MHz common base transistor
12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz
L BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
List of Unclassifed Manufacturers
ETC[ETC]
|
| TPR1000 |
Transponder/ 1090 MHz, Class C, Common Base, Pulsed; P(out) (W): 1000; P(in) (W): 250; Gain (dB): 6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55KV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz
high power COMMON BASE bipolar transistor.
|
Microsemi, Corp.
ETC[ETC]
GHZTECH[GHz Technology]
List of Unclassifed Manufacturers
|
| SMA18-1 A18-1 A18-1_1 CA18-1 A18-11 |
10 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Cascadable Amplifier 10 to 1000 MHz
|
MACOM[Tyco Electronics]
|
| LF2805A |
RF MOSFET Power Transistor, 5W, 28V 500 - 1000 MHz
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF MOSFET Power Transistor/ 5W/ 28V 500 - 1000 MHz
|
Tyco Electronics
|
| CA176.8PF/-1PF500V CA186.8PF/-0.5PF1000V CA184.7PF |
CAPACITOR, MICA, 500 V, 0.0000068 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.0000068 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.0000047 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 5000 V, 0.000068 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.000015 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.00068 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.00047 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 300 V, 0.001 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.0012 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.0039 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.000012 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 500 V, 0.0068 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.0027 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.00056 uF, THROUGH HOLE MOUNT AXIAL LEADED
CAPACITOR, MICA, 1000 V, 0.0018 uF, THROUGH HOLE MOUNT AXIAL LEADED
|
Lattice Semiconductor, Corp.
SPC Technology
IRC Advanced Film
Hokuriku Electric Industry Co., Ltd.
TE Connectivity, Ltd.
ITT Interconnect Solutions
|
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
| APT10026JLL_03 APT10026JLL APT10026JLL03 |
30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology, Ltd.
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
|
