| PART |
Description |
Maker |
| ISL6141IB ISL6151 ISL6141CB ISL6141 |
Hot Plug Controller, Negative Voltage, -20V to -80V, Prog Inrush Current, IntelliTripCurrent Regulation, UV/OV Protection, Active high PWRGD
Hot Plug Controller, Negative Voltage, -20V to -80V, Prog Inrush Current, IntelliTrip Current Regulation, UV/OV Protection, Active low PWRGD-bar
Negative Voltage Hot Plug Controller
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INTERSIL[Intersil Corporation]
|
| 2SD2150 2SC4115S 2SD2264 A5800368 2SD2150R |
Low Frequency Transistor(20V/ 3A)
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | SC-62
From old datasheet system
Low Frequency Transistor (20V, 3A)
Low Frequency Transistor(20V, 3A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
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Rohm
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| LT1641 1641F |
9V to 80V, SO-8, Active Current Limiting, Auto Retry Mode
From old datasheet system
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Linear
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| AM29DL400T-80EE AM29DL400T-80EI AM29DL400T-80FC AM |
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7306 with Standard Packaging
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7306 with Lead Free Packaging
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7104 with Lead Free Packaging
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7328 with Lead Free Packaging
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7303 with Standard Packaging
80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7380QPBF with Standard Packaging
30V N-Channel PowerTrench MOSFET
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF9910 with Standard Packaging
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Industrial version of our popular IRF7103PBF - standard packaging
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7341 with Lead Free Packaging
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7101 with Lead Free Packaging
-20V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7322D1TR with Lead Free Packaging on Tape and Reel
-20V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7422D2 with Lead Free Packaging
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF9956 with Lead Free Packaging
80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7380 with Standard Packaging
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7301 with Standard Packaging
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7331 with Standard Packaging
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7103 with Standard Packaging
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package - Q101 Qualified; Similar to IRF7103Q with Lead-Free Packaging
-20V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 package; A IRF7750 with Standard Packaging
20V FETKY - MOSFET and Schottky Diode in a Micro 8 package; A IRF7521D1 with Standard Packaging
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market; Industrial version of our popular IRF7341PBF - standard packaging EEPROM
EEPROM EEPROM
80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7380 with Lead Free Packaging
-12V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7329 with Standard Packaging
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Air Cost Control
Advanced Micro Devices, Inc.
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| 2SA1820 2SA1809 2SC3269 2SC4719 2SA1861 2SC2060 2S |
TRANSISTORS TO 92L TO-92LS MRT
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 1A I(C) | SIP
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-92
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-92
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 2A I(C) | SIP
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 2.5A I(C) | TO-92
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 100MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 400V V(BR)CEO | 1A I(C) | TO-92
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | TO-92
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 3A I(C) | TO-92
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-92
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-92VAR
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 700MA I(C) | TO-92 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 700mA的一（c）|92
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 2A I(C) | TO-92 晶体管|晶体管|进步党| 32V的五（巴西）总裁|甲一（c）|92
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 3A I(C) | TO-92 晶体管|晶体管|叩| 25V的五（巴西）总裁| 3A条一c）|2
TRANSISTORS TO 92L TO-92LS MRT 晶体2L2LS捷运
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 1A I(C) | TO-92VAR 晶体管|晶体管|进步党| 50V五（巴西）总裁| 1A条一（c）|2VAR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 80V的五（巴西）总裁| 1A条一（c）|2
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 300V五（巴西）总裁| 100mA的一（c）|园区
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | TO-92 晶体管|晶体管|进步党| 150伏五（巴西）总裁| 50mA的一（c）|2
TRANSISTORS TO 92L TO-92LS MRT 晶体92L92LS捷运
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 3A I(C) | TO-92 晶体管|晶体管|叩| 25V的五（巴西）总裁| 3A条一（c）|2
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | SIP
|
ROHM[Rohm]
Rohm CO.,LTD.
Rohm Co., Ltd.
Johanson Dielectrics, Inc.
|
| MAX6720 MAX6720UTD-T MAX6729 MAX6717 MAX6722UTD-T |
Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Dual/Triple Ultra-Low-Voltage SOT23 μP Supervisory Circuits
Dual/Triple Ultra-Low-Voltage SOT23 P Supervisory Circuits
Replaced by TPL9201 : Microcontroller Power Supply and Low-Side Driver 20-PDIP -40 to 125
Dual/Triple Ultra-Low-Voltage SOT23 レP Supervisory Circuits 三路、超低电压、SOT23封装、微处理器监控电
8-Bit Shift Register 16-PDIP -40 to 125 三路、超低电压、SOT23封装、微处理器监控电
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 0.883 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1 4.625 V,Vcc2 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
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MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Maxim Integrated Produc...
MAXIM - Dallas Semiconductor
|
| MAX6740XKD-T MAX6741XKD-T MAX6742XKD-T MAX6743XKD- |
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits
Low-Power Dual-/Triple-Voltage SC70 ?P Supervisory Circuits
(MAX6736 - MAX6745) Low-Power Dual-/Triple-Voltage SC70 UP Supervisory Circuits
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 4.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
http://
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| FMMT62006 FMMT620TC 620 FMMT620 FMMT620TA |
SuperSOT?/a> 80V NPN SILICON LOW SATURATION TRANSISTOR
SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR
SuperSOT⑩ 80V NPN SILICON LOW SATURATION TRANSISTOR
|
http://
ZETEX[Zetex Semiconductors]
|
| 2SD526 2SD526R 2SD526Y |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 4A I(C) | TO-220AB
POWER TRANSISTORS(4A/80V/30W)
POWER TRANSISTORS(4A,80V,30W)
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MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| FM1233ADS3X FM1233ACS3X FM1233ABAS3X FM1233A FMFFM |
2.72V, Active Low Bi-Directional Precision Reset Generator Circuit
3.08V, Active Low Bi-Directional Precision Reset Generator Circuit
2.88V, Active Low Bi-Directional Precision Reset Generator Circuit
3-Pin C Supervisor Circuit 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3
3-Pin レC Supervisor Circuit
3-Pin uC Supervisor Circuit
3-Pin μC Supervisor Circuit
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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
|
