PART |
Description |
Maker |
ST902X |
16K PROM / 256 RAM HCMOS MCUS
|
意法半导
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ST72371 5835 ST72T372J4B1 ST72T372J4T1 ST72372J4B1 |
8-BIT MCUs WITH 16K ROM/OTP/EPROM,512 BYTES RAM, ADC, DAC (PWM), TIMER, I2C AND SCI From old datasheet system 8-BIT MCUs WITH 16K ROM/OTP/EPROM,512 BYTES RAM, ADC, DAC (PWM), TIMER, I 2 C AND SCI
|
STMicroelectronics
|
ST9040 ST90R40C6 |
16K ROM HCMOS MCU WITH EEPROM, RAM AND A/D CONVERTER
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STMICROELECTRONICS[STMicroelectronics]
|
ST72T331N2B3S ST72T331N4T6S |
8-BIT MCU WITH 8 TO 16K OTP/EPROM, 256 EEPROM, 384 TO 512 BYTES RAM, ADC, WDG, SCI, SPI AND 2 TIMERS
|
STMicroelectronics ST Microelectronics
|
63S280 |
(63S28x) High Performance 256 x 8 PROM TiW PROM
|
Monolithic Memories
|
CYDM064A08 |
1.8V 4K/8K/16K x 16 and 8K/16K x 8 MoBL Dual-Port Static RAM
|
Cypress Semiconductor
|
AT28C16 AT28C16-15 AT28C16-15JC AT28C16-15JI AT28C |
From old datasheet system 16K (2K x 8) CMOS E 2 PROM 16K 2K x 8 CMOS E2PROM
|
ATMEL Corporation
|
ST92185B3T1 ST92185B1 ST92185B1T1 ST92185B2 ST9218 |
16K/24K/32K ROM HCMOS MCU WITH ON-SCREEN-DISPLAY 16K/24K/32K光盘HCMOS微控制器屏幕显示
|
STMicroelectronics N.V.
|
W24129A W24129A-15 W24129AJ-15 W24129AJ-12 W24129A |
16K X 8 HIGH-SPEED CMOS STATIC RAM 16K X 8 STANDARD SRAM, 12 ns, PDSO28 16K X 8 HIGH-SPEED CMOS STATIC RAM 16K X 8 STANDARD SRAM, 15 ns, PDIP28 16K X 8 HIGH-SPEED CMOS STATIC RAM 16K X 8 STANDARD SRAM, 15 ns, PDSO28
|
Winbond Electronics, Corp. Winbond Electronics Corp
|
AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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