PART |
Description |
Maker |
LH28F640SP LHF64P01 |
64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory
|
SHARP[Sharp Electrionic Components]
|
UN1210 UN1211 UN1212 UN1213 UN1214 UN1215 UN1216 U |
C; Package/Case:16-SO; Supply Voltage Max:3.6V; Page/Burst Read Access:1.4ms Flash Memory IC; Access Time, Tacc:110ns; Package/Case:64-BGA; Supply Voltage:3V; Memory Size:64Mbit Silicon NPN epitaxial planer transistor
|
Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
V54C3128804VE V54C3256804VE V54C365164VE V54C32564 |
(V54C3xxxx4VE) 64Mbit SDRAM
|
ProMOS Technologies
|
K4D623238B-GC K4D623238B-GC_L33 K4D623238B-GC_L40 |
64Mbit DDR SDRAM 64Mb的DDR SDRAM内存
|
Samsung Semiconductor Co., Ltd. Samsung Electronic
|
M30LW128D M30LW128D110N1T M30LW128D110N6T M30LW128 |
128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
|
ST Microelectronics 意法半导
|
M30LW128D110N1T M30LW128D110ZA1T M30LW128D110N6T M |
128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S80 |
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL 64Mbit SDRAM00万8位4银行同步DRAM LVTTL 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
MSM5117800C MSM5117800C-60TS-L |
2M X 8 FAST PAGE DRAM, 60 ns, PDSO28 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI ELECTRIC INDUSTRY CO LTD OKI[OKI electronic componets] OKI electronic components
|
IS41LV8205-50J IS41LV8205-50JI IS41LV8205-60JI IS4 |
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc]
|
SST29EE020-120-4C-WH SST29LE020-250-4C-U2 SST29VE0 |
7.3728MHZ CRYSTAL -40/85''C FLUKE-741B 120 REFURBISHED BY NEWARK KJA 79C 79#22 PIN RECP 128Kx8 EEPROM PSoC® Mixed-Signal Array 2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8)页模式的EEPROM 2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8)页模式EEPROM DSUB 13X3 F PCR/A G 50OHM T 2兆位56K × 8)页模式的EEPROM IC SMD AN2135SC CONTROLLER USB 256K X 8 EEPROM 5V, 120 ns, PDSO32 2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8)页模式的EEPROM 2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8)页模式EEPROM
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
AM9016EZL AM9016DDL AM9016CZL |
16K X 1 PAGE MODE DRAM, 200 ns, CQCC18 16K X 1 PAGE MODE DRAM, 250 ns, CDIP16 16K X 1 PAGE MODE DRAM, 300 ns, CQCC18
|
ADVANCED MICRO DEVICES INC
|