| PART |
Description |
Maker |
| BUP410D Q67040-A4425-A2 |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125
|
Siemens Semiconductor Group
SIEMENS AG
|
| 1SS294 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS391 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS319 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS383 |
DIODE LOW VOLTAGE HIGH SPEED SWITCHING
|
TOSHIBA[Toshiba Semiconductor]
|
| HN2S01FU E001995 |
From old datasheet system
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| KDR728E |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| 1SS319 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching
|
TOSHIBA
|
| HRB0103A |
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching Rectifying
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying
|
HITACHI[Hitachi Semiconductor]
|
| 1SS391 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching
|
TOSHIBA
|
| 1SS396 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching
|
TOSHIBA
|
| 1SS370 E000291 |
From old datasheet system
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)
DIODE (HIGH VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
