| PART |
Description |
Maker |
| ADG918BRMZ ADG919BCPZ-REEL7 ADG91808 EVAL-ADG918EB |
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches 0 MHz - 4000 MHz RF/MICROWAVE DIVERSITY SWITCH, 1.25 dB INSERTION LOSS
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT
|
Analog Devices, Inc.
|
| ADW54011Z-0REEL7 EVAL-ADG904EBZ EVAL-ADG904REBZ |
Wideband 2.5 GHz, 37 dB Isolation at 1 GHz, CMOS 1.65V to 2.75V, 4:1 Mux/SP4T
|
Analog Devices
|
| RFVC1800 RFVC1800PCK-410 RFVC1800S2 |
WIDEBAND MMIC VCO WITH BUFFER AMPLIFIER, 8 GHz to 12 GHz
|
http://
RF Micro Devices
|
| ADG904BRUZ |
Wideband 2.5 GHz, 37 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 4:1 Mux/SP4T 4-CHANNEL, SGL ENDED MULTIPLEXER, PDSO20
|
Analog Devices, Inc.
|
| ADG901BCP-500RL7 ADG901BCP-REEL7 ADG901BRM ADG901B |
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, Absorptive/Reflective Switches
Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches
|
Analog Devices, Inc.
|
| HMC586LC4B |
4 - 8 GHz, 5dBm Pout, -100dBc/Hz SSB Phase Noise@100kHz
WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 4.0 - 8.0 GHz
|
Hittite Microwave Corporation
|
| NE5209 NE5209D NE5209N SA5209D SA5209N SA5209 |
Wideband variable gain amplifier
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| SA5219 |
Wideband variable gain amplifier
|
NXP Semiconductors
|
| SA5219D SA5219N SA5219 |
Wideband variable gain amplifier
|
PHILIPS[Philips Semiconductors]
|
| SMRP-SM50 |
Wideband, DC-12 GHz
|
Mini-Circuits
|
| HMC-C016 |
WIDEBAND LNA MODULE, 7 - 17 GHz
|
Hittite Microwave Corporation
|
| BFQ149 |
PNP 5 GHz wideband transistor
|
Philips Semiconductors
|
