| PART |
Description |
Maker |
| IRF5Y1310CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 100V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.044ohm, Id=18A*)
|
IRF[International Rectifier]
|
| FDD3672 FDD3672NL |
N-Channel UltraFET Trench MOSFET 100V/ 44A/ 28m
N-Channel UltraFET Trench MOSFET 100V, 44A, 28mз
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 44A, 0.028 Ohms @ VGS = 10V, TO-252/DPAK Package
N-Channel UltraFET Trench MOSFET 100V, 44A, 28mOhm
|
FAIRCHILD[Fairchild Semiconductor]
|
| FDG361N |
N-Channel 100V Specified PowerTrench MOSFET
N-Channel 100V Specified PowerTrenchMOSFET
CAP CER 68PF 1KVDC U2J 1206
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| IRF9130 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package
TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.30ohm, Id=-11A)
|
International Rectifier
|
| HUF76633S3S HUF76633P3 FN4693 HUF76633P3T |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 38A I(D) | TO-220AB
38A, 100V, 0.036 Ohm, N-Channel, Logic 38A, 100V, 0.036 Ohm, N-Channel, Logic
From old datasheet system
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
INTERSIL[Intersil Corporation]
|
| FQI7N10L FQB7N10L FQI7N10LTU FQB7N10LTM |
100V LOGIC N-Channel MOSFET
100V N-Channel Logic Level QFET
100V LOGIC N-Channel MOSFET 7.3 A, 100 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FQU8P10 FQD8P10 FQD8P10TF FQD8P10TM FQU8P10TU |
100V P-Channel QFET
100V P-Channel MOSFET 6.6 A, 100 V, 0.53 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| JANS2N6849 JANTXV2N6849 JANTX2N6849 2489 IRFF9130 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
HEXFET? TRANSISTORS
From old datasheet system
POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
|
IRF[International Rectifier]
|
| FDP047N10 |
N-Channel PowerTrench MOSFET 100V, 164A, 4.7mOHM
100V N-Channel PowerTrench MOSFET; Package: TO-220; No of Pins: 3; Container: Rail 120 A, 100 V, 0.0047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| FDD3690 |
100V N-Channel PowerTrench MOSFET
100V N-Channel PowerTrench MOSFET
DIODE ZENER SINGLE 1000mW 6.8Vz 37mA-Izt 0.05 10uA-Ir 4Vr DO41-GLASS 5K/REEL 22 A, 100 V, 0.064 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
http://
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRHN7150 JANSF2N7268U JANSH2N7268U IRHN3150 IRHN41 |
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
CORD, COILED, 10MM STUD-4MM SKT, 4M; Length, lead:4m RoHS Compliant: NA
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) 抗辐射功率MOSFET表面贴装系统（SMD - 1
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
