| PART |
Description |
Maker |
| M65KG256AB8W8 |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
| VRF152E VRF152EMP VRF152E10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; VDD (V): 50; Coss (pF): 220; Case Style: M174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| HYB25L128160AC-7.5 HYE25L128160AC-7.5 |
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3 Ext. Temp
|
Infineon
|
| EM47DM1688SBA-125E EM47DM1688SBA-150 EM47DM1688SBA |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| M3764 |
VDD CONTROL ALARM SOUND
|
List of Unclassifed Manufacturers
ETC
SHENZHEN TIRO SEMICONDUCTOR
|
| EM47EM0888SBA-125E EM47EM0888SBA-150 EM47EM0888SBA |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| EM44CM1688LBC-25E EM44CM1688LBC-3 EM44CM1688LBC-3I |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| 2SK3322 |
Low gate charge QG = 15 nC TYP. (VDD = 450V, VGS = 10 V, ID = 5.5A)
|
TY Semiconductor Co., Ltd
|
| MT8804A |
8 x 4 Analog Switch Array with Low On-resistance, for (VDD - VEE) = 5 V to 15 V
|
Zarlink Semiconductor
|
| MT8809 |
8 x 8 Analog Switch Array with Low On-resistance, for VDD = 4.5 V to 13.2 V, with Chip Select
|
Zarlink Semiconductor
|
| K4S560432D-NC75 K4S560432D-NC7C K4S560432D-NC1H K4 |
256Mbit SDRAM, LVTTL, 133MHz
|
Samsung Electronic
|
