| PART |
Description |
Maker |
| UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access
8K x 8 CMOS SRAM
|
United Microelectronics Corporation
ETC
UMC[UMC Corporation]
|
| K9K1G08U0B K9K1G08B0B K9K1G08R0B |
128M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K1G08U0M-YIB0 K9K1G08U0M-YCB0 |
128M x 8 Bit NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9K1G08U0M-YCB0 K9K1G08U0M-YIB0 |
128M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MX25L12835FMI10G MX25L12835FM2I10G MX25L12835FZ2I1 |
3V 128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L12839FZNW08G |
3V 128M-BIT [x 1/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| M5M29KB_T331AVP M5M29KB M5M29KB/T331AVP M5M29KB331 |
Memory>NOR type Flash Memory
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Renesas Electronics Corporation.
|
| MX28F128J3 MX28F640J3 |
(MX28F128J3 - MX28F640J3) 128M [x8/x16] SINGLE 3V PAGE MODE FLASH MEMORY
|
Macronix International
|
| MBM29XL12DF-80 MBM29XL12DF MBM29XL12DF-70 E520901 |
From old datasheet system
PAGE MODE FLASH MEMORY CMOS 128M BIT
|
FUJITSU[Fujitsu Media Devices Limited]
|
| K9F1G08D0M K9F1G16D0M K9F1G08U0M-YCB00 |
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
128M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| ULS-2821R ULS-2803H ULS-2823H ULS-2822 ULS-2815H U |
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:110ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:128MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 高电压，大电流达林顿阵列
50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Allegro MicroSystems, Inc.
|
