| PART |
Description |
Maker |
| UPC1658G UPC1658G-E1 |
RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Low Noise, High Frequncy Si MMIC Amplifier(低噪声高频率放大
LOW NOISE/ HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE HIGH FREQUENCY Si MMIC AMPLIFIER
|
NEC Corp.
NEC[NEC]
|
| AM-162PIN AMC-162SMA AMC-AMS-162 AMS-162PIN |
10-100 MHz, low noise amplifier, 12.5 dB gain
Low Noise Amplifier/ 12.5 dB Gain/ 10 - 100 MHz
JT 12C 8#20 4#16 SKT RECP
Circular Connector; No. of Contacts:18; Series:MS27508; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
Low Noise Amplifier, 12.5 dB Gain, 10 - 100 MHz
|
MA-Com
Tyco Electronics
|
| MAX2650 MAX2650EUS-T |
DC-to-Microwave / 5V Low-Noise Amplifier
DC-to-Microwave, 5V Low-Noise Amplifier 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| MGA-665P8-BLK MGA-665P8-TR1 MGA-665P8 MGA-665P8-TR |
GaAs Enhancement-Mode PHEMT 0.5 6 GHz Low Noise Amplifier GaAs增强型PHEMT.56 GHz的低噪声放大
GaAs Enhancement-Mode PHEMT 0.5 - 6 GHz Low Noise Amplifier
From old datasheet system
MGA-665P8 · MGA-665P8 0.5-6GHz Low Noise Amplifier
|
Avago Technologies, Ltd.
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HS9-OP470ARH-Q HS-OP470AR HS-OP470ARH 5962R9853301 |
16 AMP SPDT MINIATURE POWER RELAY
Radiation Hardened, Very Low Noise
Quad Operational Amplifier(抗辐射低噪声四路运算放大
Radiation Hardened, Very Low Noise Quad Operational Amplifier
Radiation Hardened/ Very Low Noise Quad Operational Amplifier
|
Intersil Corporation
|
| UPA827 UPA827TF UPA827TF-T1 PA827TF |
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
|
NEC Corp.
|
| AA038N1-99 |
261 GHz Low Noise Amplifier
26-41 GHz Low Noise Amplifier
GT 4C 4#4 PIN PLUG
|
Alpha Industries Inc
ALPHA[Alpha Industries]
Alpha Industries, Inc.
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HA1-5104_883 HA-5104883 HA-5104/883 |
Op Amp, Quad 8MHz, Unity Gain Stable, Low Noise, 883 Compliant
Low Noise, High Performance, Quad Operational Amplifier
|
INTERSIL[Intersil Corporation]
|
| 2SC4095 2SC4095-T1 2SC4095R 2SC4095R-T2 2SC4095R-T |
For amplify microwave and low noise.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
|
NEC[NEC]
|
