PART |
Description |
Maker |
K7S1636U4C |
512Kx36 & 1Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
K7Q163652A K7Q161852A |
512Kx36 & 1Mx18 QDRTM b2 SRAM Electrical Outlet Connector; Voltage Rating:125V; Contact Plating:Nickel; Current Rating:30A RoHS Compliant: Yes 512Kx36
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
IS61QDB41M18A IS61QDB451236A |
512Kx36 and 1Mx18 configuration available
|
Integrated Silicon Solu...
|
K7Q163664B10 K7Q161864B |
512Kx36 & 1Mx18 QDRTM b4 SRAM
|
Samsung semiconductor
|
K7M161825M K7M163625M |
512Kx36 & 1Mx18 Flow-Through NtRAM-TM
|
Samsung semiconductor
|
K7B163635B |
512Kx36 & 1Mx18 Synchronous SRAM
|
Samsung Electronics
|
K7N163645MK7N161845M |
512Kx36 & 1Mx18 Pipelined NtRAMData Sheet
|
Samsung Electronic
|
K7Q161852A |
(K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
|
Samsung semiconductor
|
K7N163645AK7N163245AK7N161845A |
512Kx36/32 & 1Mx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
K7M161825M |
(K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM-TM
|
Samsung semiconductor
|
K7J161882B |
(K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM
|
Samsung semiconductor
|