| PART |
Description |
Maker |
| HYE18L512320BF-7.5 HYB18L512320BF-7.5 |
DRAMs for Mobile Applications 512-Mbit SDR Mobile-RAM
|
http://
Qimonda AG
|
| HYE18L256169BFX-7.5 HYB18L256169BFX HYB18L256169BF |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM
|
Qimonda AG
|
| HYE18L512160BF-7.5 HYB18L512160BF-7.5 |
DRAMs for Mobile Applications 512-Mbit Mobile-RAM
|
Qimonda AG
|
| HYE18M256320CF-6_7.5 HYB18M256320CF-6_7.5 HYB18M25 |
DRAMs for Mobile Applications
|
Qimonda AG
|
| HYB25L128160AC-7.5 HYE25L128160AC-7.5 |
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3 Ext. Temp
|
Infineon
|
| M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S172 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data sheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M377S1723AT3 M377S3323AT0SDRAMDIMMINTEL1.2VERB M37 |
16Mx72 SDRAM DIMM with PLL & Register based on 16Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD Serial Presence Detect
32MBx72 SDRAM DIMM with PLL & Register based on 16MBx8, 4Banks 4KB Ref., 3.3V Synchronous DRAMs with SPD Serial Presence Detect
32MBx72 SDRAM DIMM with PLL & Register based on 32MBx4, 4Banks, 4KB Ref., 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|
| 82845MP 82845MZ 82845MX |
Intel 845 Family Chipset-Mobile 82845MP/82845MZ Chipset Memory Controller Hub Mobile (MCH-M)
|
Intel Corp.
|
| HYE18P32160AC-15 |
Specialty DRAMs - 2Mx16, VFBGA-54; Available 2Q04
|
Infineon
|
| HYE25L256160AC-7.5 |
Specialty DRAMs - 256M (16Mx16) 133MHz 3-3-3 Ext. Temp.
|
Infineon
|
| M464S1654BT1 M464S1654BT1-C1H M464S1654BT1-C1L M46 |
16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung semiconductor
|
