| PART |
Description |
Maker |
| MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A.
N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State
GE Solid State
|
| SSM3J01T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| MTV20N50E |
Power Field Effect Transistor
|
ON Semiconductor
|
| MRF6S19200H MRF6S19200HR3 MRF6S19200HSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MRF9045LR1 |
RF Power Field Effect Transistors
|
飞思卡尔半导体(中国)有限公司
|
| MTP10N35 MTP10N40 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| MRF6S9125NR1 MRF6S9125 MRF6S9125MBR1 MRF6S9125MR1 |
RF Power Field Effect Transistors
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF6S9045NR1 MRF6S9045N MRF6S9045NBR1 |
RF Power Field Effect Transistors
|
Freescale Semiconductor...
FREESCALE[Freescale Semiconductor, Inc]
|
| MTP12N10L |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
