PART |
Description |
Maker |
RT8H042C |
This is tentative specification
|
Isahaya Electronics Corporation
|
P0340WQLB-T |
Tentative Product Specification
|
AZ Displays
|
P0430WQLC-T |
Tentative Product Specification
|
AZ Displays
|
G104X1-L03 |
TFT LCD Tentative Specification
|
AZ Displays http://
|
G141I1-L01 |
TFT LCD Tentative Specification
|
AZ Displays
|
2SA493 |
SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS)(TENTATIVE)
|
Unknow
|
TC58NS256DC EA10128 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M 8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM) From old datasheet system TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
Toshiba Semiconductor
|
TC51WHM616AXBN65 TC51WHM616AXBN70 |
4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
2SK3022TENTATIVE |
2SK3022 (Tentative) - N-Channel Power F-MOS FET Power F-MOS FETs
|
Matsshita / Panasonic
|
2SD2258 2SD2258TENTATIVE |
2SD2258 (Tentative) - Silicon NPN epitaxial planer type Silicon NPN epitaxial planer type(For low-frequency output amplification)
|
Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|