| PART |
Description |
Maker |
| UPD28C64 |
65536-Bit Electrically Erasable And Programmable Read-Only Memory
|
http://
NEC[NEC]
NEC Corp.
|
| 5962-8946803XC 5962-8946803ZA 5962-8946803YA 5962- |
400ksps, 5V, 8-/4-Channel, 10-Bit ADCs with 2.5V Reference and Parallel Interface
UV-Erasable/OTP Complex PLD UV-Erasable/OTP复杂可编程逻辑器件
10-Bit, Multichannel ADCs/DACs with FIFO, Temperature Sensing, and GPIO Ports UV-Erasable/OTP复杂可编程逻辑器件
|
Rohm Co., Ltd.
|
| M5M51R16AWG-10L D99015 M5M51R16AWG-15L M5M51R16AWG |
From old datasheet system
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| EPL16P2BP EPL12P6BP |
Eval Board for ISL5829 Dual 12-bit, 3.3V, 130/210 MSPS, CommLink™ High Speed D/A Converter
UV-Erasable/OTP PLD UV-Erasable/OTP可编程逻辑器件
|
International Rectifier, Corp.
|
| HM6287P-45 HM6287P-55 HM6287LP-45 HM6287LP-55 HM62 |
65536-word x 1-bit Speed CMOS Static RMA
|
http://
HITACHI[Hitachi Semiconductor]
|
| M5M51016BRT-12VL-I M5M51016BRT-12VLL-I M5M51016BTP |
Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85
From old datasheet system
1048576-BIT CMOSSTATIC RAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CXK58512TM/M-10LL CXK58512TM/M-55LL CXK58512TM/M-7 |
65536-word x 8-bit High Speed CMOS Static RAM
65536-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| AT22LV10L-25DI AT22LV10-20DI AT22LV10-25DI AT22LV1 |
UV-Erasable/OTP PLD UV-Erasable/OTP可编程逻辑器件
Thick Film Chip Resistor - RMC 1/20 2K 1% R UV-Erasable/OTP可编程逻辑器件
|
Atmel, Corp.
|
| TC511664BZ TC511664B |
65536 word x 16 bit DRAM
65,536 WORD x 16 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
