PART |
Description |
Maker |
UPD28C64 |
65536-Bit Electrically Erasable And Programmable Read-Only Memory
|
http:// NEC[NEC] NEC Corp.
|
M5M51016BRT-10L-I M5M51016BRT-10LL-I M5M51016BRT-7 |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576位(65536字由16位)的CMOS静态RAM From old datasheet system 1048576-1048576-BIT CMOS STATICRAM 1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP |
From old datasheet system 1048576-BIT CMOS STATICRAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-bit (65536-word by 16-bit) CMOS static RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
TC57512AD-15 TC57512AD-20 |
65536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY 65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
|
ETC List of Unclassifed Manufacturers
|
MB85411 |
65536 Words x 9-Bit
|
Fujitsu
|
MB85410 |
65536 Words x 8-Bit
|
Fujitsu
|
HM6287 HM6287P HM6287LP |
65536-word x 1-bit Speed CMOS Static RMA
|
Hitachi,Ltd.
|
BR24L02-W BR24L02F-W BR24L02FJ-W BR24L02FV-W BR24L |
256x8 bit electrically erasable PROM 256x8位电可擦除可编程ROM 256×8 bit electrically erasable PROM 256?8 bit electrically erasable PROM
|
Rohm Co., Ltd. Rohm CO.,LTD.
|
TC511664BZ TC511664B |
65536 word x 16 bit DRAM 65,536 WORD x 16 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
BR24L01AF-W BR24L01AFV-W BR24L01AFVM-W BR24L01 BR2 |
1288 bit electrically erasable PROM 128】8 bit electrically erasable PROM
|
ROHM[Rohm]
|