PART |
Description |
Maker |
LC361000AMLL LC361000ARLL-10 LC361000ARLL-70 LC361 |
1 MEG (131072 words X 8 bits) SRAM 1迈可31072字8位)的SRAM 128K X 8 STANDARD SRAM, 100 ns, PDSO32
|
Sanyo Electric Co., Ltd. Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
LC35256FM LC35256FM-70U FT-55U FT-70U LC35256FT-70 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs 256K (32768 words 8 bits) SRAM Control Pins: NOT OE and NOT CE 256K (32768 words x 8 bits) SRAM Control Pins: Not OE and Not CE 256K (32768 words X 8 bits) SRAM Control Pins: OE and CE 256K (32768 words 8 bits) SRAM Control Pins: OE and CE SRAM,32KX8,CMOS,SOP,28PIN,PLASTIC From old datasheet system
|
Intersil Sanyo Semiconductor Corp SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
EDD2508AKTA-5C EDD2508AKTA-5 EDD2508AKTA-5B |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
ELPIDA[Elpida Memory]
|
EDS2532EEBH-9A EDS2532EEBH-9A-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
|
Elpida Memory, Inc.
|
EDD2516AKTA-6B-E EDD2516AKTA-7B-E EDD2516AKTA-7A-E |
256M bits DDR SDRAM (16M words x 16 bits)
|
Elpida Memory, Inc. ELPIDA MEMORY INC
|
EDS1232CASE-1A-E EDS1232CASE-1AL-E |
ER 8C 7#16 1#12 PIN RECP LINE 4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 128M bits SDRAM (4M words x 32 bits) 128兆位的SDRAM分字× 32位)
|
Elpida Memory, Inc.
|
EDD1216AASE-7A-E EDD1216AASE EDD1216AASE-6B-E |
128M bits DDR SDRAM (8M words x 16 bits)
|
ELPIDA[Elpida Memory]
|
EDS2516CDTA-75-E |
256M bits SDRAM (16M words x 16 bits)
|
Elpida Memory, Inc.
|
EDD1232AABH-7A-E EDD1232AABH EDD1232AABH-6B-E |
128M bits DDR SDRAM (4M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
EDS2532CABH-75L-E EDS2532CABH EDS2532CABH-1A-E EDS |
256M bits SDRAM (8M words x 32 bits)
|
ELPIDA[Elpida Memory]
|