PART |
Description |
Maker |
CDP1821C CDP1821C3 FN2983 CDP1821C_3 CDP1821CD3 CD |
From old datasheet system High-Reliability CMOS 1024-Word x 1-Bit Static RAM 高可靠性的CMOS 1024字1位静态存储器 High-Reliability CMOS 1024-Word x 1-Bit Static RAM 1K X 1 STANDARD SRAM, 255 ns, CDIP16
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INTERSIL[Intersil Corporation] Intersil, Corp.
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M5M4V16169DTP-10 M5M4V16169DTP-7 M5M4V16169DTP-8 M |
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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M5M4V16169DRT-15 M5M4V16169DTP |
16MCDRAM:16M(1M-WORD BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM 16MCDRAM6米(100万字6位)6K的缓存内存(1024字由16位)的SRAM
|
Mitsubishi Electric, Corp.
|
R1EX25008ASA00I-15 |
Serial Peripheral Interface 8k EEPROM (1024-word × 8-bit) 16k EEPROM (2048-word × 8-bit)
|
Renesas Electronics Corporation
|
HM628128FP-10 HM628128FP-12 HM628128FP-7 HM628128F |
100ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM 120ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
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HITACHI[Hitachi Semiconductor]
|
CXK5B16120J/TM-12 |
65536-word x 16-bit High Speed Bi-CMOS Static RAM 65536字16位高速双CMOS静态RAM 65536-word x 16-bit High Speed Bi-CMOS Static RAM
|
Johnson Electric Group SONY
|
MR27V3252D |
2,097,152-Word x 16-Bit or 4,194,304-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
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OKI[OKI electronic componets]
|
MSM27C452CZ |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
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OKI electronic components OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
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KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power 512Kx8 bit CMOS static RAM, 100ns, low power 524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM PT 16C 16#16 PIN PLUG 524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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