| PART |
Description |
Maker |
| BF1009S Q62702-F1628 Q62702-C2595 Q62702-C2607 Q62 |
NPN Silicon AF Transistors (For AF driver and output stages High collector current)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| INK0012AC1 INK0012AM1 INK0012AT2 INK0012AU1 INK001 |
High speed switching Silicon N-channel MOSFET
|
Isahaya Electronics Corporation
|
| INK0002AX08 INK0002AC1 INK0002AU1 INK0002AM1 |
High speed switching Silicon N-channel MOSFET
|
Isahaya Electronics Corporation
|
| INJ0001AU1 INJ0001AM1 INJ0001AX08 INJ0001AC1 INJ00 |
High speed switching Silicon P-channel MOSFET
|
Isahaya Electronics Corporation
|
| HAT2035R HAT2035R-EL-E |
0.5 A, 150 V, 5.5 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| NTE2946 NTE2944 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| NTE2935 NTE2933 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
| H7N1004LS |
Silicon N-Channel MOSFET High-Speed Power Switching
|
Renesas Electronics Corporation.
|
| RJM0306JSP-00-J0 RJM0306JSP |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJL5014DPP RJL5014DPP-00-T2 |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H7N1004FM12 H7N1004FM-15 |
Silicon N-Channel MOSFET High-Speed Power Switching
|
Renesas Electronics Corporation
|
