| PART |
Description |
Maker |
| KTK5162S KTK5162 |
SMOS FET/ Analog Switch Application
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| IP4284CZ10-TBR IP4284CZ10-TT |
ESD protection for ultra high-speed interfaces TVs, monitors
ESD protection for ultra high-speed interfaces UNIDIRECTIONAL, SILICON, TVS DIODE
|
NXP Semiconductors N.V.
|
| BGX50A Q62702-G38 |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| 1SS187 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS368 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
Toshiba Semiconductor
|
| 1SS309 |
DIODE (ULTRA HIGH SPEED SWITCHING APLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS362 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS308 |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| KTK5132E KTK5132 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
|
KEC[KEC(Korea Electronics)]
|
| HN1D01FU E001975 |
From old datasheet system
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| KDS142E |
SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
