| PART |
Description |
Maker |
| MMBZ15VAL MMBZ9V1AL MMBZ5V6AL10 MMBZ27VAL MMBZ6V2A |
24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS
TVS UNIDIRECT CA 40W 14.5V SOT23 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
|
Diodes Incorporated
Diodes, Inc.
|
| NDS9952ANL |
Dual N & P-Channel Enhancement Mode Field Effect Transistor 3.7 A, 30 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| FDMS5352 |
60V N-Channel Power Trench MOSFET; Package: Power 56 (PQFN); No of Pins: 8; Container: Tape & Reel
60V N-Channel Power TrenchMOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| CHF2525CNT500LW CHF2525CNT500LX |
RESISTOR, 50 OHM 40W DC-9GHZ; Series:CHF2525; Resistance:50R; Tolerance, resistance: /-5%; Power rating:40W; Resistor element type:Thick Film; Case style:2525; Length / Height, external:6.35mm; Tolerance, :5%; Tolerance, -:5%; RoHS Compliant: Yes
9 GHz 40 W Termination Chip
|
BOURNS INC
Bourns Electronic Solutions
|
| MJE13002 MJE13003 13003BR |
POWER TRANSISTORS(1.5A /300-400V /40W)
POWER TRANSISTORS(1.5A300-400V40W)
POWER TRANSISTORS(1.5A,300-400V,40W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| FQB50N06LTM |
60V N-Channel Logic level QFET; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 52.4 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|
| 5962-03218 5962-03219 5962-03221 5962-03222 5962-0 |
40W Total Output Power 28 Vin 3.3 Vout Single DC-DC Radiation Hardened Converter in a M3G Package. DLA Number 5962-03218
40W Total Output Power 28 Vin 5 Vout Single DC-DC Radiation Hardened Converter in a M3G Package. DLA Number 5962-03219
40W Total Output Power 28 Vin 12 Vout Single DC-DC Radiation Hardened Converter in a M3G Package. DLA Number 5962-03221
40W Total Output Power 28 Vin 15 Vout Single DC-DC Radiation Hardened Converter in a M3G Package. DLA Number 5962-03222
40W Total Output Power 28 Vin /-5 Vout Dual DC-DC Radiation Hardened Converter in a M3G Package. DLA Number 5962-03223
40W Total Output Power 28 Vin /-12 Vout Dual DC-DC Radiation Hardened Converter in a M3G Package.
|
International Rectifier
|
| M57788 M57788H |
450-470MHz / 12.5V / 40W / FM MOBILE RADIO
MITSUBISHI RF POWER MODULE 450-470MHz, 12.5V, 40W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
|
| FQD8P10TF |
100V P-Channel QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 6.6 A, 100 V, 0.53 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
|
Fairchild Semiconductor, Corp.
|
| FQD7N10TF FQD7N10TM |
5.8 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
100V N-Channel QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
|
FAIRCHILD SEMICONDUCTOR CORP
|
