| PART |
Description |
Maker |
| MTD3N25E MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTV25N50E MTV25N50E_D ON2672 MTV25N50E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTV32N20E MTV32N20E_D ON2673 MTV32N20E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(ON) = 0.075 OHM
From old datasheet system
|
ON Semiconductor
ETC
Motorola, Inc
|
| MTP6N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MTW4N80E MTW4N80 |
TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS是电子场效应功率场效TRANSISITOR N沟道增强模式硅栅
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MMFT5P03HD ON2230 MMFT5P03HDT3 ON2229 |
TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS
From old datasheet system
TMOS P-CHANNEL FIELD FEECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
