| PART |
Description |
Maker |
| K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G1 |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K2G08U0M-FIB0 K9K2G08U0M-VCB0 K9K2G08U0M-VIB0 K9 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MB81EDS516545 |
MEMORY Consumer FCRAM CMOS 512M Bit (4 bank x 2M word x 64 bit) Consumer Applications Specific Memory for SiP
|
Fujitsu Component Limited.
|
| HM5257165B HM5257165BTD-A6 HM5257165B-A6 HM5257165 |
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank /32-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM
Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:30; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:18-30
16 M EDO DRAM(2-Mword*8-bit) 2K Refresh
Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:18; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:18-32
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM
CABLE ASSEMBLY
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
|
Elpida Memory, Inc.
|
| TC58DVM92A1FT0 |
512M-Bit CMOS NAND EPROM
|
Toshiba
|
| HX313C9FR-4 |
4GB 512M x 64-Bit DDR3-1333
|
List of Unclassifed Man...
|
| HX316C10FW-4 |
4GB 512M x 64-Bit DDR3-1600
|
List of Unclassifed Man...
|
| KVR13LSE9S8-4 |
4GB 1Rx8 512M x 72-Bit PC3L-10600
|
List of Unclassifed Man...
|
| TC58NVG2S3ETA00 |
4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| KVR16LE11S8-4 |
4GB 1Rx8 512M x 72-Bit PC3L-12800
|
List of Unclassifed Man...
|
