PART |
Description |
Maker |
K4S160822D K4S160822DT-G_FL K4S160822DT-G_F10 K4S1 |
2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC 4 Banks X 8M X 8Bit Synchronous DRAM SDRAM - 256Mb
|
Hynix Semiconductor
|
K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S |
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S |
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
KM48S16030T-G_FH |
4M x 8Bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
MT47H32M16HR-25E MT47H64M8CF-25EG |
DDR2 SDRAM MT47H128M4 ?32 Meg x 4 x 4 banks MT47H64M8 ?16 Meg x 8 x 4 banks MT47H32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
W9816G6BB-7 W9816G6BB |
BGA SDRAM 512K X 2 BANKS X 16 BITS SDRAM From old datasheet system
|
Winbond Electronics
|
W981616BH |
SDRAM 1Mx16 512K ′ 2 BANKS ′ 16 BITS SDRAM
|
Winbond Electronics
|