| PART |
Description |
Maker |
| M5M51016BRT-10LL M5M51016BRT-10L D98007 M5M51016BT |
1048576-BIT(65536-WORD BY 16-BIT) CMOS STATIC RAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
From old datasheet system
1048576-BIT(65536-16-1048576-BIT(65536-WORD WORDBY BY16-BIT)CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| HM6709A |
65536-WORD 4 BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY
|
Hitachi,Ltd.
|
| CXK5T16100TM- CXK5T16100TM-12LLX CXK5T16100TM |
128 x 64 pixel format, LED Backlight available
65536-word x 16-bit High Speed CMOS Static RAM
|
SONY[Sony Corporation]
|
| CXK5V16100TM-10LLX CXK5V16100TM-85LLX CXK5V16100TM |
128 x 64 pixel format, LED Backlight available
65536-word X 16-bit High Speed CMOS Static RAM
|
SONY[Sony Corporation]
|
| M5L2764K M5L2764K-2 |
65536 Bit Erasable and Electrically Reprogrammable ROM
65536-BIT (8192-WORD BY 8-BIT) ERASABLE AND ELECTRICALLT REPROGRAMMABLE ROM
|
Mitsubishi Electric Semiconductor
|
| HM6287 HM6287P HM6287LP |
65536-word x 1-bit Speed CMOS Static RMA
|
Hitachi,Ltd.
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| MBM2764 MBM2764-20 MBM2764-25 MBM2764-30 MBM2764-X |
UV ERASABLE 65536-BIT READ ONLY MEMORY
UV Erasable 65536 Bit ROM
|
Fujitsu Limited
Fujitsu Component Limited.
Fujitsu Media Devices Limited
Fujitsu Microelectronics
|
| M5M51016BRT-10VLL M5M51016BRT-10VL M5M51016BTP-10V |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
1048576-1048576-BIT CMOS STATICRAM
|
Mitsubishi Electric Corporation
|
