PART |
Description |
Maker |
2SK2219 1026 2SK2219-21 2SK2219-23 |
1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET N-Channel Junction FET for Capacitor Microphone Applications(应用于电容器话筒的N沟道结型场效应管) N沟道场效应晶体管的结电容麦克风应用(应用于电容器话筒沟道结型场效应管 From old datasheet system N-Channel Junction Silicon FET
|
Sanyo Electric Co., Ltd.
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3SK309 |
Silicon N Channel MOS FET GaAs N Channel Dual Gate MES FET UHF RF Amplifier
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Hitachi Semiconductor
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NID5003NT4 NID5003N |
Self-Protected FET with Temperature and Current Limit 42 V, 20 A, Single N-Channel, DPAK Self-Protected FET with Temperature and Current Limit(带温度和电流限制的自保护FET) 42 V, 20 A, Single N−Channel, DPAK 20 A, 42 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET Self-Protected FET with Temperature and Current Limit(甯?俯搴???垫???????淇??FET)
|
ONSEMI[ON Semiconductor]
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PHP160NQ08T PHB160NQ08T |
CAP 0.1UF 100V 10% X7R AXIAL TR-14 75 A, 75 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET N-channel TrenchMOS standard level FET N-channel Trenchmos (tm) standard level FET
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
BUK9Y19-55B |
N-channel TrenchMOSlogic level FET N-channel TrenchMOS⑩ logic level FET N-channel Trenchmos (tm) logic level FET
|
PHILIPS[Philips Semiconductors]
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MTP10N40 MTP10N40E ON2540 MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS From old datasheet system
|
ON Semiconductor Motorola, Inc.
|
2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00 |
From old datasheet system P-CHANNEL MOS FET FOR HIGH SWITCHING P-channel MOS FET (-30V, -2A)
|
NEC[NEC]
|
MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system TMOS POWER FET 3.0 AMPERES 600 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
SSW1N50B SSI1N50B SSW1N50BTM SSI1N50BTU |
500V N-Channel B-FET / Substitute of SSI1N50A 500V N-Channel B-FET / Substitute of SSW1N50A 520V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
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