| PART |
Description |
Maker |
| NM27C040 NM27C040Q150NBSP NM27C040Q150 27C040 NM27 |
4,194,304 Bit (512K x 8) High Performance CMOS EPROM
4194304-Bit (512K x 8) High Performance CMOS EPROM
4,194,304-Bit (512K x 8) High Performance CMOS EPROM
4 /194 /304-Bit (512K x 8) High Performance CMOS EPROM
IC-4MB CMOS OTP PROM
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| FM27C040 FM27C040X120 FM27C040X150 FM27C040X90 |
4,194,304-Bit (512K x 8)High Performance CMOS EPROM
|
Fairchild Semiconductor
|
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| TC514102J TC514102J10 TC514102J80 TC514102Z10 TC51 |
4,194,304 x 1 BIT DYNAMIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| M6MGD13TW66CWG-P |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 134217728位（8388608字由16位）的CMOS闪存
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| MSM66V84B |
4,194,304-word x 1-bit Serial Register
From old datasheet system
|
OKI[OKI electronic componets]
|
| MR533252J-XXTP MR533252J MR533252J-XXMA |
2,097,152-Word X 16-Bit or 4,194,304-Word X 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM
|
OKI[OKI electronic componets]
|
| MK31VT464-10YE MK31VT464 |
4,194,304 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1BANK)
|
OKI[OKI electronic componets]
|
| MSC23S4641E-8BS16 |
4,194,304 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
|
OKI electronic components
OKI electronic componets
|
